Simulation of p-n junction properties of nanowires and nanowire arrays

Jun Hu, Yang Liu, Alex Maslov, Cun-Zheng Ning, Robert Dutton, Sung Mo Kang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations

Abstract

The unique properties of semiconductor nanowires pose promising applications in optoelectronics such as photodetectors and lasers, Owing to the increased surface/volume ratio, nanowire-based p-n junctions exhibit qualitatively different properties from those of bulk cases. These include weaker electrostatic screening and stronger fringe field effects. This work employs a general device simulator, PROPHET, to numerically investigate the unique electrical properties of p-n junctions in single nanowires andnanowire arrays, The implications of such effects in nanowire-based photo-detector design are also examined.

Original languageEnglish (US)
Title of host publicationPhysics and Simulation of Optoelectronic Devices XV
DOIs
StatePublished - May 22 2007
EventPhysics and Simulation of Optoelectronic Devices XV - San Jose, CA, United States
Duration: Jan 22 2007Jan 25 2007

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume6468
ISSN (Print)0277-786X

Other

OtherPhysics and Simulation of Optoelectronic Devices XV
CountryUnited States
CitySan Jose, CA
Period1/22/071/25/07

    Fingerprint

Keywords

  • Electrical properties
  • Fringe field effects
  • Nanowire arrays
  • Nanowires
  • Optoelectronics
  • P-n junctions

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Hu, J., Liu, Y., Maslov, A., Ning, C-Z., Dutton, R., & Kang, S. M. (2007). Simulation of p-n junction properties of nanowires and nanowire arrays. In Physics and Simulation of Optoelectronic Devices XV [64681E] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 6468). https://doi.org/10.1117/12.701210