@inproceedings{93b8bb3eb8814cc3955b8854e5bac4c8,
title = "Simulation of p-n junction properties of nanowires and nanowire arrays",
abstract = "The unique properties of semiconductor nanowires pose promising applications in optoelectronics such as photodetectors and lasers, Owing to the increased surface/volume ratio, nanowire-based p-n junctions exhibit qualitatively different properties from those of bulk cases. These include weaker electrostatic screening and stronger fringe field effects. This work employs a general device simulator, PROPHET, to numerically investigate the unique electrical properties of p-n junctions in single nanowires andnanowire arrays, The implications of such effects in nanowire-based photo-detector design are also examined.",
keywords = "Electrical properties, Fringe field effects, Nanowire arrays, Nanowires, Optoelectronics, P-n junctions",
author = "Jun Hu and Yang Liu and Alex Maslov and Cun-Zheng Ning and Robert Dutton and Kang, {Sung Mo}",
year = "2007",
doi = "10.1117/12.701210",
language = "English (US)",
isbn = "081946581X",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Physics and Simulation of Optoelectronic Devices XV",
note = "Physics and Simulation of Optoelectronic Devices XV ; Conference date: 22-01-2007 Through 25-01-2007",
}