Simulation of field-effect biosensors (BioFETs)

Thomas Windbacher, Viktor Sverdlov, Siegfried Selberherr, Clemens Heitzinger, Norbert Mauser, Christian Ringhofer

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Scopus citations

Abstract

In this paper a bottom-up approach for modeling field-effect Biosensors (BioFETs) is developed. Starting from the given positions of charged atoms, of a given molecule, the charge and the dipole moment of a single molecule are calculated. This charge and dipole moment are used to calculate the mean surface density and mean dipole moment at the biofunctionalized surface, which areintroduced into homogenized interface conditions linking the Angstrom-scale of the molecule with the micrometer-scale of the FET. By considering a single-stranded to double-stranded DNA reaction, we demonstrate the capability of a BioFET to detect a certain DNA and to resolve the DNA orientation.

Original languageEnglish (US)
Title of host publicationInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD
Pages193-196
Number of pages4
DOIs
StatePublished - 2008
Event2008 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2008 - Hakone, Japan
Duration: Sep 9 2008Sep 11 2008

Other

Other2008 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2008
CountryJapan
CityHakone
Period9/9/089/11/08

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Computer Science Applications
  • Modeling and Simulation

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  • Cite this

    Windbacher, T., Sverdlov, V., Selberherr, S., Heitzinger, C., Mauser, N., & Ringhofer, C. (2008). Simulation of field-effect biosensors (BioFETs). In International Conference on Simulation of Semiconductor Processes and Devices, SISPAD (pp. 193-196). [4648270] https://doi.org/10.1109/SISPAD.2008.4648270