Simulation of electron transport in high-lying superlattice minibands

Jenifer Lary; Stephen M. Goodnick

doi:10.1117/12.137602

Simulation of electron transport in high-lying superlattice minibands

Jenifer Lary, Stephen M. Goodnick

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

A Monte Carlo solution to the Boltzmann transport equation is used to simulate hot-carrier relaxation and transport in a unipolar superlattice base transistor. Simulated results show that, due to the reduced density of states and wavefunction overlap, interminiband scattering is suppressed and high-energy transport is maintained in the superlattice base longer than in a bulk base region. However, an increased probability of reverse scattering and a lower magnitude of velocity along the superlattice axis result in a reduced transfer ratio across the superlattice base.

Original language	English (US)
Pages (from-to)	22-35
Number of pages	14
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	1675
DOIs	https://doi.org/10.1117/12.137602
State	Published - Jan 1 1992
Externally published	Yes
Event	Quantum Well and Superlattice Physics IV 1992 - Somerset, United States Duration: Mar 22 1992 → …

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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title = "Simulation of electron transport in high-lying superlattice minibands",

abstract = "A Monte Carlo solution to the Boltzmann transport equation is used to simulate hot-carrier relaxation and transport in a unipolar superlattice base transistor. Simulated results show that, due to the reduced density of states and wavefunction overlap, interminiband scattering is suppressed and high-energy transport is maintained in the superlattice base longer than in a bulk base region. However, an increased probability of reverse scattering and a lower magnitude of velocity along the superlattice axis result in a reduced transfer ratio across the superlattice base.",

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AU - Goodnick, Stephen M.

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N2 - A Monte Carlo solution to the Boltzmann transport equation is used to simulate hot-carrier relaxation and transport in a unipolar superlattice base transistor. Simulated results show that, due to the reduced density of states and wavefunction overlap, interminiband scattering is suppressed and high-energy transport is maintained in the superlattice base longer than in a bulk base region. However, an increased probability of reverse scattering and a lower magnitude of velocity along the superlattice axis result in a reduced transfer ratio across the superlattice base.

AB - A Monte Carlo solution to the Boltzmann transport equation is used to simulate hot-carrier relaxation and transport in a unipolar superlattice base transistor. Simulated results show that, due to the reduced density of states and wavefunction overlap, interminiband scattering is suppressed and high-energy transport is maintained in the superlattice base longer than in a bulk base region. However, an increased probability of reverse scattering and a lower magnitude of velocity along the superlattice axis result in a reduced transfer ratio across the superlattice base.

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JF - Proceedings of SPIE - The International Society for Optical Engineering

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T2 - Quantum Well and Superlattice Physics IV 1992

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