Abstract
A Monte Carlo solution to the Boltzmann transport equation is used to simulate hot-carrier relaxation and transport in a unipolar superlattice base transistor. Simulated results show that, due to the reduced density of states and wavefunction overlap, interminiband scattering is suppressed and high-energy transport is maintained in the superlattice base longer than in a bulk base region. However, an increased probability of reverse scattering and a lower magnitude of velocity along the superlattice axis result in a reduced transfer ratio across the superlattice base.
Original language | English (US) |
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Pages (from-to) | 22-35 |
Number of pages | 14 |
Journal | Proceedings of SPIE - The International Society for Optical Engineering |
Volume | 1675 |
DOIs | |
State | Published - Jan 1 1992 |
Externally published | Yes |
Event | Quantum Well and Superlattice Physics IV 1992 - Somerset, United States Duration: Mar 22 1992 → … |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering