Simulation of electron transport in high-lying superlattice minibands

Jenifer Lary; Stephen M. Goodnick

doi:10.1117/12.137602

Simulation of electron transport in high-lying superlattice minibands

Jenifer Lary, Stephen M. Goodnick

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

A Monte Carlo solution to the Boltzmann transport equation is used to simulate hot-carrier relaxation and transport in a unipolar superlattice base transistor. Simulated results show that, due to the reduced density of states and wavefunction overlap, interminiband scattering is suppressed and high-energy transport is maintained in the superlattice base longer than in a bulk base region. However, an increased probability of reverse scattering and a lower magnitude of velocity along the superlattice axis result in a reduced transfer ratio across the superlattice base.

Original language	English (US)
Pages (from-to)	22-35
Number of pages	14
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	1675
DOIs	https://doi.org/10.1117/12.137602
State	Published - 1992
Externally published	Yes
Event	Quantum Well and Superlattice Physics IV 1992 - Somerset, United States Duration: Mar 22 1992 → …

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.137602

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title = "Simulation of electron transport in high-lying superlattice minibands",

abstract = "A Monte Carlo solution to the Boltzmann transport equation is used to simulate hot-carrier relaxation and transport in a unipolar superlattice base transistor. Simulated results show that, due to the reduced density of states and wavefunction overlap, interminiband scattering is suppressed and high-energy transport is maintained in the superlattice base longer than in a bulk base region. However, an increased probability of reverse scattering and a lower magnitude of velocity along the superlattice axis result in a reduced transfer ratio across the superlattice base.",

author = "Jenifer Lary and Goodnick, {Stephen M.}",

note = "Funding Information: 1. P. England, J.R. Hayes, E. Colas and M. Helm, {"}Hot Electron Transport in High-Lying Minibands in Semiconductor Superlattices,{"} Solid-State Electronics, vol. 32, pp. 1213-1217, 1989. 2. SM. Goodnick, {"}High Energy Injection into Semiconductor Superlattices,{"} Office of Naval Research Grant N00014-89-J-1894, 1987. Publisher Copyright: {\textcopyright} 1992 SPIE. All rights reserved.; Quantum Well and Superlattice Physics IV 1992 ; Conference date: 22-03-1992",

year = "1992",

doi = "10.1117/12.137602",

language = "English (US)",

volume = "1675",

pages = "22--35",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

}

TY - JOUR

T1 - Simulation of electron transport in high-lying superlattice minibands

AU - Lary, Jenifer

AU - Goodnick, Stephen M.

N1 - Funding Information: 1. P. England, J.R. Hayes, E. Colas and M. Helm, "Hot Electron Transport in High-Lying Minibands in Semiconductor Superlattices," Solid-State Electronics, vol. 32, pp. 1213-1217, 1989. 2. SM. Goodnick, "High Energy Injection into Semiconductor Superlattices," Office of Naval Research Grant N00014-89-J-1894, 1987. Publisher Copyright: © 1992 SPIE. All rights reserved.

PY - 1992

Y1 - 1992

N2 - A Monte Carlo solution to the Boltzmann transport equation is used to simulate hot-carrier relaxation and transport in a unipolar superlattice base transistor. Simulated results show that, due to the reduced density of states and wavefunction overlap, interminiband scattering is suppressed and high-energy transport is maintained in the superlattice base longer than in a bulk base region. However, an increased probability of reverse scattering and a lower magnitude of velocity along the superlattice axis result in a reduced transfer ratio across the superlattice base.

AB - A Monte Carlo solution to the Boltzmann transport equation is used to simulate hot-carrier relaxation and transport in a unipolar superlattice base transistor. Simulated results show that, due to the reduced density of states and wavefunction overlap, interminiband scattering is suppressed and high-energy transport is maintained in the superlattice base longer than in a bulk base region. However, an increased probability of reverse scattering and a lower magnitude of velocity along the superlattice axis result in a reduced transfer ratio across the superlattice base.

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DO - 10.1117/12.137602

M3 - Conference article

AN - SCOPUS:84931557404

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VL - 1675

SP - 22

EP - 35

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Quantum Well and Superlattice Physics IV 1992

Y2 - 22 March 1992

ER -

Simulation of electron transport in high-lying superlattice minibands

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