Simulation of electron escape from GaNAs/GaAs quantum well solar cells

Yongjie Zou; Christiana Honsberg; Alexandre Freundlich; Stephen Goodnick

doi:10.1109/PVSC.2014.6925540

Simulation of electron escape from GaNAs/GaAs quantum well solar cells

Yongjie Zou, Christiana Honsberg, Alexandre Freundlich, Stephen Goodnick

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

Quantum wells embedded in the active region of single-bandgap solar cells have previously been shown to increase the absorption of photons of energies lower than the host bandgap, while maintaining the open-circuit voltage. Fast carrier escape from the quantum wells is essential to achieve such performance enhancements. In the present work, we use ensemble Monte Carlo simulation to model the escape time for photo-excited carriers in dilute nitride GaNAs/GaAs quantum wells to the continuum, for different well structures. The simulated electron escape rate due to polar optical phonon absorption and emission decreases exponentially with the well depth in agreement with thermionic emission theory.

Original language	English (US)
Title of host publication	2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	2908-2911
Number of pages	4
ISBN (Electronic)	9781479943982
DOIs	https://doi.org/10.1109/PVSC.2014.6925540
State	Published - Oct 15 2014
Event	40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States Duration: Jun 8 2014 → Jun 13 2014

Publication series

Name	2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014

Other

Other	40th IEEE Photovoltaic Specialist Conference, PVSC 2014
Country/Territory	United States
City	Denver
Period	6/8/14 → 6/13/14

Keywords

carrier escape
ensemble Monte Carlo
photovoltaic cells
quantum well

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/PVSC.2014.6925540

Cite this

Zou, Y., Honsberg, C., Freundlich, A., & Goodnick, S. (2014). Simulation of electron escape from GaNAs/GaAs quantum well solar cells. In 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014 (pp. 2908-2911). Article 6925540 (2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2014.6925540

Simulation of electron escape from GaNAs/GaAs quantum well solar cells. / Zou, Yongjie; Honsberg, Christiana; Freundlich, Alexandre et al.
2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 2908-2911 6925540 (2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Zou, Y, Honsberg, C, Freundlich, A & Goodnick, S 2014, Simulation of electron escape from GaNAs/GaAs quantum well solar cells. in 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014., 6925540, 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014, Institute of Electrical and Electronics Engineers Inc., pp. 2908-2911, 40th IEEE Photovoltaic Specialist Conference, PVSC 2014, Denver, United States, 6/8/14. https://doi.org/10.1109/PVSC.2014.6925540

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abstract = "Quantum wells embedded in the active region of single-bandgap solar cells have previously been shown to increase the absorption of photons of energies lower than the host bandgap, while maintaining the open-circuit voltage. Fast carrier escape from the quantum wells is essential to achieve such performance enhancements. In the present work, we use ensemble Monte Carlo simulation to model the escape time for photo-excited carriers in dilute nitride GaNAs/GaAs quantum wells to the continuum, for different well structures. The simulated electron escape rate due to polar optical phonon absorption and emission decreases exponentially with the well depth in agreement with thermionic emission theory.",

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AB - Quantum wells embedded in the active region of single-bandgap solar cells have previously been shown to increase the absorption of photons of energies lower than the host bandgap, while maintaining the open-circuit voltage. Fast carrier escape from the quantum wells is essential to achieve such performance enhancements. In the present work, we use ensemble Monte Carlo simulation to model the escape time for photo-excited carriers in dilute nitride GaNAs/GaAs quantum wells to the continuum, for different well structures. The simulated electron escape rate due to polar optical phonon absorption and emission decreases exponentially with the well depth in agreement with thermionic emission theory.

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Simulation of electron escape from GaNAs/GaAs quantum well solar cells

Abstract

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Keywords

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