Abstract

Quantum wells embedded in the active region of single-bandgap solar cells have previously been shown to increase the absorption of photons of energies lower than the host bandgap, while maintaining the open-circuit voltage. Fast carrier escape from the quantum wells is essential to achieve such performance enhancements. In the present work, we use ensemble Monte Carlo simulation to model the escape time for photo-excited carriers in dilute nitride GaNAs/GaAs quantum wells to the continuum, for different well structures. The simulated electron escape rate due to polar optical phonon absorption and emission decreases exponentially with the well depth in agreement with thermionic emission theory.

Original languageEnglish (US)
Title of host publication2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2908-2911
Number of pages4
ISBN (Electronic)9781479943982
DOIs
StatePublished - Oct 15 2014
Event40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States
Duration: Jun 8 2014Jun 13 2014

Publication series

Name2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014

Other

Other40th IEEE Photovoltaic Specialist Conference, PVSC 2014
CountryUnited States
CityDenver
Period6/8/146/13/14

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Keywords

  • carrier escape
  • ensemble Monte Carlo
  • photovoltaic cells
  • quantum well

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Zou, Y., Honsberg, C., Freundlich, A., & Goodnick, S. (2014). Simulation of electron escape from GaNAs/GaAs quantum well solar cells. In 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014 (pp. 2908-2911). [6925540] (2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2014.6925540