Simulation of CW laser excitation of GaAs with the energy diffusion equation

Selim E. Guencer, David K. Ferry

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

Recently, hot electron to neutral acceptor recombination luminescence experiments under continuous wave laser excitation have been utilized to investigate ultrafast scattering processes. In this study, a numerical simulation of the hot e-A degrees problem is performed using the energy diffusion equation approach. The effects of elastic scattering processes and optical phonon scattering have been incorporated, as well as a static screening approximation to the electron-electron coulombic interaction, for GaAs irradiated by a CW laser source under low temperature (10 K). By comparing the Gamma -L intervalley population transfer results with experimental data, a value for the intervalley coupling constant and scattering lifetime was deduced.

Original languageEnglish (US)
Article number082
Pages (from-to)B324-B327
JournalSemiconductor Science and Technology
Volume7
Issue number3 B
DOIs
StatePublished - Dec 1 1992

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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