Simulation of CW laser excitation of GaAs with the energy diffusion equation

Selim E. Guencer, David K. Ferry

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Recently, hot electron to neutral acceptor recombination luminescence experiments under continuous wave laser excitation have been utilized to investigate ultrafast scattering processes. In this study, a numerical simulation of the hot e-A0 problem is performed using the energy diffusion equation approach. The effects of elastic scattering processes and optical phonon scattering have been incorporated, as well as a static screening approximation to the electron-electron coulombic interaction, for GaAs irradiated by a CW laser source under low temperature (10 K). By comparing the Γ-L intervalley population transfer results with experimental data, a value for the intervalley coupling constant and scattering lifetime was deduced.

Original languageEnglish (US)
JournalSemiconductor Science and Technology
Volume7
Issue number3 B
StatePublished - Mar 1992

Fingerprint

Laser excitation
Continuous wave lasers
Scattering
Electron-electron interactions
Phonon scattering
Elastic scattering
Hot electrons
scattering
excitation
lasers
Luminescence
Screening
simulation
continuous wave lasers
hot electrons
energy
Computer simulation
elastic scattering
electron scattering
screening

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Simulation of CW laser excitation of GaAs with the energy diffusion equation. / Guencer, Selim E.; Ferry, David K.

In: Semiconductor Science and Technology, Vol. 7, No. 3 B, 03.1992.

Research output: Contribution to journalArticle

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