Simulation of CW laser excitation of GaAs with the energy diffusion equation

Recently, hot electron to neutral acceptor recombination luminescence experiments under continuous wave laser excitation have been utilized to investigate ultrafast scattering processes. In this study, a numerical simulation of the hot e-A degrees problem is performed using the energy diffusion equation approach. The effects of elastic scattering processes and optical phonon scattering have been incorporated, as well as a static screening approximation to the electron-electron coulombic interaction, for GaAs irradiated by a CW laser source under low temperature (10 K). By comparing the Gamma -L intervalley population transfer results with experimental data, a value for the intervalley coupling constant and scattering lifetime was deduced.