Recently, hot electron to neutral acceptor recombination luminescence experiments under continuous wave laser excitation have been utilized to investigate ultrafast scattering processes. In this study, a numerical simulation of the hot e-A degrees problem is performed using the energy diffusion equation approach. The effects of elastic scattering processes and optical phonon scattering have been incorporated, as well as a static screening approximation to the electron-electron coulombic interaction, for GaAs irradiated by a CW laser source under low temperature (10 K). By comparing the Gamma -L intervalley population transfer results with experimental data, a value for the intervalley coupling constant and scattering lifetime was deduced.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry