SIMS Studies of 9Be Implants in Semi-Insulating InP

J. D. Oberstar; B. G. Streetman; J. E. Baker; Peter Williams

doi:10.1149/1.2124127

SIMS Studies of ⁹Be Implants in Semi-Insulating InP

J. D. Oberstar, B. G. Streetman, J. E. Baker, Peter Williams

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

The migration of implanted 9Be in (100) semi-insulating InP during thermal annealing has been studied using secondary ion mass spectrometry. Under typical annealing conditions for InP (T ≥ 700°C, t = 15-30 min) we have observed that implanted 9Be is a rapid diffusant in semi-insulating InP for fluences as low as 1 x 1013 cm–2. Redistribution of the compensating impurity (Fe or Cr) has also been observed. In several respects Cr redistribution differs from that of Fe. Twin-peaked structures appear in the impurity profiles of 550°C anneals of 100 keV, 1015 cm-2 9Be implanted materials. Models for this phenomenon are discussed. Correlations are noted between 9Be and compensating impurity profiles in annealed, high fiuence implanted samples. Flat tails of 9Be extending over several microns are observed in semi-insulating InP.

Original language	English (US)
Pages (from-to)	1312-1320
Number of pages	9
Journal	Journal of the Electrochemical Society
Volume	129
Issue number	6
DOIs	https://doi.org/10.1149/1.2124127
State	Published - Jun 1982
Externally published	Yes

Keywords

anneal
implantation
impurity redistribution

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

Access to Document

10.1149/1.2124127

Cite this

@article{39cfd430fa9642e1bd2ecc7651577a1a,

title = "SIMS Studies of 9Be Implants in Semi-Insulating InP",

abstract = "The migration of implanted 9Be in (100) semi-insulating InP during thermal annealing has been studied using secondary ion mass spectrometry. Under typical annealing conditions for InP (T ≥ 700°C, t = 15-30 min) we have observed that implanted 9Be is a rapid diffusant in semi-insulating InP for fluences as low as 1 x 1013 cm–2. Redistribution of the compensating impurity (Fe or Cr) has also been observed. In several respects Cr redistribution differs from that of Fe. Twin-peaked structures appear in the impurity profiles of 550°C anneals of 100 keV, 1015 cm-2 9Be implanted materials. Models for this phenomenon are discussed. Correlations are noted between 9Be and compensating impurity profiles in annealed, high fiuence implanted samples. Flat tails of 9Be extending over several microns are observed in semi-insulating InP.",

keywords = "anneal, implantation, impurity redistribution",

author = "Oberstar, {J. D.} and Streetman, {B. G.} and Baker, {J. E.} and Peter Williams",

year = "1982",

month = jun,

doi = "10.1149/1.2124127",

language = "English (US)",

volume = "129",

pages = "1312--1320",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Electrochemical Society, Inc.",

number = "6",

}

TY - JOUR

T1 - SIMS Studies of 9Be Implants in Semi-Insulating InP

AU - Oberstar, J. D.

AU - Streetman, B. G.

AU - Baker, J. E.

AU - Williams, Peter

PY - 1982/6

Y1 - 1982/6

N2 - The migration of implanted 9Be in (100) semi-insulating InP during thermal annealing has been studied using secondary ion mass spectrometry. Under typical annealing conditions for InP (T ≥ 700°C, t = 15-30 min) we have observed that implanted 9Be is a rapid diffusant in semi-insulating InP for fluences as low as 1 x 1013 cm–2. Redistribution of the compensating impurity (Fe or Cr) has also been observed. In several respects Cr redistribution differs from that of Fe. Twin-peaked structures appear in the impurity profiles of 550°C anneals of 100 keV, 1015 cm-2 9Be implanted materials. Models for this phenomenon are discussed. Correlations are noted between 9Be and compensating impurity profiles in annealed, high fiuence implanted samples. Flat tails of 9Be extending over several microns are observed in semi-insulating InP.

AB - The migration of implanted 9Be in (100) semi-insulating InP during thermal annealing has been studied using secondary ion mass spectrometry. Under typical annealing conditions for InP (T ≥ 700°C, t = 15-30 min) we have observed that implanted 9Be is a rapid diffusant in semi-insulating InP for fluences as low as 1 x 1013 cm–2. Redistribution of the compensating impurity (Fe or Cr) has also been observed. In several respects Cr redistribution differs from that of Fe. Twin-peaked structures appear in the impurity profiles of 550°C anneals of 100 keV, 1015 cm-2 9Be implanted materials. Models for this phenomenon are discussed. Correlations are noted between 9Be and compensating impurity profiles in annealed, high fiuence implanted samples. Flat tails of 9Be extending over several microns are observed in semi-insulating InP.

KW - anneal

KW - implantation

KW - impurity redistribution

UR - http://www.scopus.com/inward/record.url?scp=0020138922&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0020138922&partnerID=8YFLogxK

U2 - 10.1149/1.2124127

DO - 10.1149/1.2124127

M3 - Article

AN - SCOPUS:0020138922

SN - 0013-4651

VL - 129

SP - 1312

EP - 1320

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 6

ER -