SIMS STUDIES OF **9Be IMPLANTS IN SEMI-INSULATING InP.

J. D. Oberstar, B. G. Streetman, J. E. Baker, Peter Williams

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Abstract

The migration of implanted **9Be in (100) semi-insulating InP during thermal annealing has been studied using secondary ion mass spectrometry. Under typical annealing conditions for InP (T greater than equivalent to 700 degree C, t equals 15-30 min) wer have observed that implanted **9Be is a rapid diffusant in semi-insulating InP for fluences as low as 1 multiplied by 10**1**3 cm** minus **2. Redistribution of the compensating impurity (Fe or Cr) has also been obseved. In several respects Cr redistribution differs from that of Fe. Twin-peaked structures appear in the impurity profiles of 550 degree C anneals of 100 kev, 10**1**5 cm** minus **2 **9Be implanted materials. Models for this phenomenon are discussed.

Original languageEnglish (US)
Pages (from-to)1312-1320
Number of pages9
JournalJournal of the Electrochemical Society
Volume129
Issue number6
Publication statusPublished - Jun 1982
Externally publishedYes

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ASJC Scopus subject areas

  • Electrochemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Oberstar, J. D., Streetman, B. G., Baker, J. E., & Williams, P. (1982). SIMS STUDIES OF **9Be IMPLANTS IN SEMI-INSULATING InP. Journal of the Electrochemical Society, 129(6), 1312-1320.