The migration of implanted **9Be in (100) semi-insulating InP during thermal annealing has been studied using secondary ion mass spectrometry. Under typical annealing conditions for InP (T greater than equivalent to 700 degree C, t equals 15-30 min) wer have observed that implanted **9Be is a rapid diffusant in semi-insulating InP for fluences as low as 1 multiplied by 10**1**3 cm** minus **2. Redistribution of the compensating impurity (Fe or Cr) has also been obseved. In several respects Cr redistribution differs from that of Fe. Twin-peaked structures appear in the impurity profiles of 550 degree C anneals of 100 kev, 10**1**5 cm** minus **2 **9Be implanted materials. Models for this phenomenon are discussed.
|Original language||English (US)|
|Number of pages||9|
|Journal||Journal of the Electrochemical Society|
|Publication status||Published - Jun 1982|
ASJC Scopus subject areas
- Surfaces, Coatings and Films
- Surfaces and Interfaces