Simplified Calculations of Radiation Dose-Rate Sensitivity of Bipolar Transistors

Harold P. Hjalmarson, Steven C. Witczak, Samuel Z. Roark, Renee Van Ginhoven, Thomas Buchheit, Hugh Barnaby, Philippe Adell

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A simplified approach to estimating radiation-induced Si-SiO2 interface trap densities, based on steady-state populations of relevant mobile species, is presented. The dose-rate sensitivity arises from bimolecular reaction terms. Molecular hydrogen increases the effects of ionizing radiation. Exciton contributions explain effects at high dose-rates. Calculations are consistent with known trends in dose, dose rate, hydrogen content and temperature.

Original languageEnglish (US)
Title of host publicationRADECS 2021 - European Conference on Radiation and its Effects on Components and Systems
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781665437943
DOIs
StatePublished - 2021
Event21st European Conference on Radiation and its Effects on Components and Systems, RADECS 2021 - Vienna, Austria
Duration: Sep 13 2021Sep 17 2021

Publication series

NameRADECS 2021 - European Conference on Radiation and its Effects on Components and Systems

Conference

Conference21st European Conference on Radiation and its Effects on Components and Systems, RADECS 2021
Country/TerritoryAustria
CityVienna
Period9/13/219/17/21

Keywords

  • device model
  • dose rate
  • ELDRS
  • exciton
  • hydrogen
  • interface trap
  • ionizing radiation
  • total dose

ASJC Scopus subject areas

  • Space and Planetary Science
  • Instrumentation
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality
  • Electronic, Optical and Magnetic Materials
  • Radiation

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