We report the development of a simple chemical route to growing Ge1-xSnx semiconductors using ultrahigh-vacuum chemical vapor deposition and the molecular precursor (Ph)SnD3 as the source of Sn atoms. Thin films were deposited on oxidized and oxide-free Si by reactions of (Ph)SnD3 with Ge2H6 at 350°C. The composition, microstructure, and bonding properties of the films were characterized by Rutherford backscattering, high-resolution analytical electron microscopy, and Raman spectroscopy. As-deposited Ge1-xSnx on oxidized Si displayed good crystallinity which improved significantly by annealing at 400°C. High-resolution electron microscopy and diffraction indicated a diamond-cubic structure with lattice constants intermediate to those of Ge and α-Sn. As-deposited Ge1-xSnx on pure Si was monocrystalline and epitaxial. Nanoprobe analysis in plan view and cross section revealed that the as-deposited and annealed materials were homogeneous with good chemical purity. The Raman spectra showed bands corresponding to Ge-Ge and Sn-Ge vibrations with frequencies consistent with a random tetrahedral alloy.
|Original language||English (US)|
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - Jun 4 2001|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)