@inproceedings{2e2ab9fb719646a589dae0727e714698,
title = "Simple and accurate single event charge collection macro modeling for circuit simulation",
abstract = "A simple macro-model to accurately simulate upset error on CMOS devices is presented. This macro-model can accurately simulate the typical behavior of single event effect (SEE) caused by ionizing radiation charge collection at N type and P type diffusions. The model is calibrated using 3-D mixed mode technology computer aided design (TCAD) device simulations and implemented as a SPICE circuit macro-model. The model uses a dependent current source with a Weibull distribution to model the current injection on circuit node. The model shows physical response and adjusting parameters allows high accuracy to the 3-D TCAD simulated response.",
keywords = "3D simulation, Ionizing particle, SPICE, Single Event Effects, TCAD",
author = "Aymeric Privat and Clark, {Lawrence T.}",
note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; IEEE International Symposium on Circuits and Systems, ISCAS 2015 ; Conference date: 24-05-2015 Through 27-05-2015",
year = "2015",
month = jul,
day = "27",
doi = "10.1109/ISCAS.2015.7169019",
language = "English (US)",
series = "Proceedings - IEEE International Symposium on Circuits and Systems",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "1858--1861",
booktitle = "2015 IEEE International Symposium on Circuits and Systems, ISCAS 2015",
}