Simple and accurate single event charge collection macro modeling for circuit simulation

Aymeric Privat, Lawrence T. Clark

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

A simple macro-model to accurately simulate upset error on CMOS devices is presented. This macro-model can accurately simulate the typical behavior of single event effect (SEE) caused by ionizing radiation charge collection at N type and P type diffusions. The model is calibrated using 3-D mixed mode technology computer aided design (TCAD) device simulations and implemented as a SPICE circuit macro-model. The model uses a dependent current source with a Weibull distribution to model the current injection on circuit node. The model shows physical response and adjusting parameters allows high accuracy to the 3-D TCAD simulated response.

Original languageEnglish (US)
Title of host publicationProceedings - IEEE International Symposium on Circuits and Systems
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1858-1861
Number of pages4
Volume2015-July
ISBN (Print)9781479983919
DOIs
Publication statusPublished - Jul 27 2015
EventIEEE International Symposium on Circuits and Systems, ISCAS 2015 - Lisbon, Portugal
Duration: May 24 2015May 27 2015

Other

OtherIEEE International Symposium on Circuits and Systems, ISCAS 2015
CountryPortugal
CityLisbon
Period5/24/155/27/15

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Keywords

  • 3D simulation
  • Ionizing particle
  • Single Event Effects
  • SPICE
  • TCAD

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Privat, A., & Clark, L. T. (2015). Simple and accurate single event charge collection macro modeling for circuit simulation. In Proceedings - IEEE International Symposium on Circuits and Systems (Vol. 2015-July, pp. 1858-1861). [7169019] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISCAS.2015.7169019