Simple and accurate single event charge collection macro modeling for circuit simulation

Aymeric Privat, Lawrence T. Clark

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations

Abstract

A simple macro-model to accurately simulate upset error on CMOS devices is presented. This macro-model can accurately simulate the typical behavior of single event effect (SEE) caused by ionizing radiation charge collection at N type and P type diffusions. The model is calibrated using 3-D mixed mode technology computer aided design (TCAD) device simulations and implemented as a SPICE circuit macro-model. The model uses a dependent current source with a Weibull distribution to model the current injection on circuit node. The model shows physical response and adjusting parameters allows high accuracy to the 3-D TCAD simulated response.

Original languageEnglish (US)
Title of host publication2015 IEEE International Symposium on Circuits and Systems, ISCAS 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1858-1861
Number of pages4
ISBN (Electronic)9781479983919
DOIs
StatePublished - Jul 27 2015
EventIEEE International Symposium on Circuits and Systems, ISCAS 2015 - Lisbon, Portugal
Duration: May 24 2015May 27 2015

Publication series

NameProceedings - IEEE International Symposium on Circuits and Systems
Volume2015-July
ISSN (Print)0271-4310

Other

OtherIEEE International Symposium on Circuits and Systems, ISCAS 2015
CountryPortugal
CityLisbon
Period5/24/155/27/15

Keywords

  • 3D simulation
  • Ionizing particle
  • SPICE
  • Single Event Effects
  • TCAD

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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