Simple adaptive optimization algorithm for the tungsten LPCVD process

Timothy S. Cale, Peter E. Crouch, Sisan Shen, Konstantinos Tsakalis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this note, a reduced order, physically-motivated empirical model is proposed and validated via simulation for the single wafer tungsten Low Pressure Chemical Vapor Deposition (LPCVD) processing step. The so-called multiple response surface method is adopted to describe the spatial deposition nonuniformity across a wafer surface. Based on this modeling methodology, a simple adaptive optimization control strategy is developed by which the average deposition thickness at the wafer surface is controlled to a desired level while its variation of the state across the wafer surface is minimized. Simulation results demonstrate the effectiveness of the control strategy and its potential capability of rejecting disturbances during the process. In this study, a simulation platform (CFDSWR) is used to represent the single wafer tungsten LPCVD process. The control strategy introduced here is quite general and applicable to other processing steps as well.

Original languageEnglish (US)
Title of host publicationProceedings of the American Control Conference
Pages1294-1298
Number of pages5
Volume2
StatePublished - 1995
EventProceedings of the 1995 American Control Conference. Part 1 (of 6) - Seattle, WA, USA
Duration: Jun 21 1995Jun 23 1995

Other

OtherProceedings of the 1995 American Control Conference. Part 1 (of 6)
CitySeattle, WA, USA
Period6/21/956/23/95

ASJC Scopus subject areas

  • Control and Systems Engineering

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