We investigate the nature of thin films formed by the photodissolution of Ag into Se-rich Ge-Se glasses for use in programmable metallization cell devices. These devices rely on ion transport in the film so produced to create electrically programmable resistance states. The way in which Ag incorporates into the chalcogenide film during photodiffusion is examined using Rutherford backscattering spectroscopy analysis and Raman spectroscopy. The results suggest that an Ag-rich phase separates due to the reaction of Ag with free Se from the chalcogenide glass leaving a Ge-rich chalcogenide matrix.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Condensed Matter Physics
- Materials Chemistry