Silver diffusion and defect formation in Si (1 1 1) substrate at elevated temperatures

Linghui Chen, Yuxiao Zeng, Phucanh Nyugen, Terry Alford

Research output: Contribution to journalArticle

32 Citations (Scopus)

Abstract

Silver diffusion into Si (1 1 1) substrate at moderate temperatures (400-700 °C) has been studied by the use of secondary ion mass spectrometry (SIMS), Rutherford backscattering spectrometry (RBS), and optical etch pit observations. The diffusion coefficient of silver has been estimated. Silicon crystallographic defects start to form at the silicon surface when the annealing temperature is above 450 °C. This phenomenon is related to the silver diffusion. The activation energy of the defect formation is approximately 2.46 ± 0.26 eV. It is higher than the reported activation energy (1.59 eV) for silver diffusion at higher temperature (1100-1300 °C). The possible mechanisms are discussed to account for the experimental results.

Original languageEnglish (US)
Pages (from-to)224-227
Number of pages4
JournalMaterials Chemistry and Physics
Volume76
Issue number3
DOIs
StatePublished - Sep 1 2002

Fingerprint

Silver
silver
Defects
defects
Silicon
Substrates
Activation energy
activation energy
Temperature
temperature
Rutherford backscattering spectroscopy
silicon
Secondary ion mass spectrometry
Spectrometry
secondary ion mass spectrometry
backscattering
diffusion coefficient
Annealing
annealing
spectroscopy

Keywords

  • Activation energy
  • Si (1 1 1) substrate
  • Silver diffusion

ASJC Scopus subject areas

  • Materials Chemistry

Cite this

Silver diffusion and defect formation in Si (1 1 1) substrate at elevated temperatures. / Chen, Linghui; Zeng, Yuxiao; Nyugen, Phucanh; Alford, Terry.

In: Materials Chemistry and Physics, Vol. 76, No. 3, 01.09.2002, p. 224-227.

Research output: Contribution to journalArticle

Chen, Linghui ; Zeng, Yuxiao ; Nyugen, Phucanh ; Alford, Terry. / Silver diffusion and defect formation in Si (1 1 1) substrate at elevated temperatures. In: Materials Chemistry and Physics. 2002 ; Vol. 76, No. 3. pp. 224-227.
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