Silicon / silicon oxide and silicon / silicon nitride multilayers for X-UV optical applications

P. Boher, Ph Houdy, L. Hennet, J. P. Delaboundiniere, M. Kuhne, P. Muller, Z. G. Li, David Smith

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Si/SiO 2 and Si/Si 3N 4 multilayers have been fabricated using a locally made reactive diode rf-sputtering system. The layer alternation is obtained by modulating a partial pressure of oxygen or nitrogen near the sample using a silicon target and argon as sputtering gas. O 2 and N 2 partial pressure conditions were optimized to deposit stoechiometric SiO 2 and Si 3N 4 films without significant reaction with the silicon target. In-situ kinetic ellipsometry was used to monitore both thick film and multilayer deposition. The different interfaces appear very sharp with a little contamination of the silicon layers especially using oxygen. The multilayers were characterized by grazing X-ray reflection ( Cu - K α line ), and the reflectivity was measured in the soft X-ray range (120 - 350 angstrom) by synchrotron radiation. Both Si/SiO 2 and Si/Si 3N 4 multilayers exhibit well defined Bragg peaks with very narrow bandpasses (two to three times lower than the conventional Mo/Si multilayer), and high absolute reflectivities (up to ≈ 22% at 130 angstrom). The soft X-ray performances of these mirrors are explained using the physical characteristics deduced from kinetic ellipsometry, grazing X-ray reflection, infrared absorption and transmission electron microscopy measurements.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsRichard B. Hoover, Arthur B.C.Jr. Walker
PublisherPubl by Int Soc for Optical Engineering
Pages39-55
Number of pages17
Volume1343
StatePublished - 1991
Externally publishedYes
EventX-Ray/EUV Optics for Astronomy, Microscopy, Polarimetry, and Projection Lithography - San Diego, CA, USA
Duration: Jul 9 1990Jul 13 1990

Other

OtherX-Ray/EUV Optics for Astronomy, Microscopy, Polarimetry, and Projection Lithography
CitySan Diego, CA, USA
Period7/9/907/13/90

Fingerprint

Silicon oxides
Silicon nitride
silicon oxides
silicon nitrides
Multilayers
Silicon
grazing
silicon
X rays
ellipsometry
partial pressure
Ellipsometry
x rays
sputtering
Partial pressure
Sputtering
reflectance
K lines
kinetics
alternations

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Boher, P., Houdy, P., Hennet, L., Delaboundiniere, J. P., Kuhne, M., Muller, P., ... Smith, D. (1991). Silicon / silicon oxide and silicon / silicon nitride multilayers for X-UV optical applications. In R. B. Hoover, & A. B. C. J. Walker (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 1343, pp. 39-55). Publ by Int Soc for Optical Engineering.

Silicon / silicon oxide and silicon / silicon nitride multilayers for X-UV optical applications. / Boher, P.; Houdy, Ph; Hennet, L.; Delaboundiniere, J. P.; Kuhne, M.; Muller, P.; Li, Z. G.; Smith, David.

Proceedings of SPIE - The International Society for Optical Engineering. ed. / Richard B. Hoover; Arthur B.C.Jr. Walker. Vol. 1343 Publ by Int Soc for Optical Engineering, 1991. p. 39-55.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Boher, P, Houdy, P, Hennet, L, Delaboundiniere, JP, Kuhne, M, Muller, P, Li, ZG & Smith, D 1991, Silicon / silicon oxide and silicon / silicon nitride multilayers for X-UV optical applications. in RB Hoover & ABCJ Walker (eds), Proceedings of SPIE - The International Society for Optical Engineering. vol. 1343, Publ by Int Soc for Optical Engineering, pp. 39-55, X-Ray/EUV Optics for Astronomy, Microscopy, Polarimetry, and Projection Lithography, San Diego, CA, USA, 7/9/90.
Boher P, Houdy P, Hennet L, Delaboundiniere JP, Kuhne M, Muller P et al. Silicon / silicon oxide and silicon / silicon nitride multilayers for X-UV optical applications. In Hoover RB, Walker ABCJ, editors, Proceedings of SPIE - The International Society for Optical Engineering. Vol. 1343. Publ by Int Soc for Optical Engineering. 1991. p. 39-55
Boher, P. ; Houdy, Ph ; Hennet, L. ; Delaboundiniere, J. P. ; Kuhne, M. ; Muller, P. ; Li, Z. G. ; Smith, David. / Silicon / silicon oxide and silicon / silicon nitride multilayers for X-UV optical applications. Proceedings of SPIE - The International Society for Optical Engineering. editor / Richard B. Hoover ; Arthur B.C.Jr. Walker. Vol. 1343 Publ by Int Soc for Optical Engineering, 1991. pp. 39-55
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AB - Si/SiO 2 and Si/Si 3N 4 multilayers have been fabricated using a locally made reactive diode rf-sputtering system. The layer alternation is obtained by modulating a partial pressure of oxygen or nitrogen near the sample using a silicon target and argon as sputtering gas. O 2 and N 2 partial pressure conditions were optimized to deposit stoechiometric SiO 2 and Si 3N 4 films without significant reaction with the silicon target. In-situ kinetic ellipsometry was used to monitore both thick film and multilayer deposition. The different interfaces appear very sharp with a little contamination of the silicon layers especially using oxygen. The multilayers were characterized by grazing X-ray reflection ( Cu - K α line ), and the reflectivity was measured in the soft X-ray range (120 - 350 angstrom) by synchrotron radiation. Both Si/SiO 2 and Si/Si 3N 4 multilayers exhibit well defined Bragg peaks with very narrow bandpasses (two to three times lower than the conventional Mo/Si multilayer), and high absolute reflectivities (up to ≈ 22% at 130 angstrom). The soft X-ray performances of these mirrors are explained using the physical characteristics deduced from kinetic ellipsometry, grazing X-ray reflection, infrared absorption and transmission electron microscopy measurements.

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