Silicon Quantum Dot in a Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) Structure

Maroun Khoury, Allen Gunther, David P. Pivin, Mary Jo Rack, David K. Ferry

Research output: Contribution to journalConference article

12 Scopus citations

Abstract

We have fabricated a 200 nm quantum dot in a silicon Metal-Oxidc-Semiconductor Field Effect Transistor (MOSFET) structure. Confining gates situated on top of a 10 nm oxide deplete the electron gas created by an inversion gate 70 nm away from the Si-SiO2 interface. Measurements indicate that the size of the dot can be tuned by the gates. Furthermore, we observe conductance fluctuations in the gate characteristic which are indicative of single-electron behavior.

Original languageEnglish (US)
Pages (from-to)469-472
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume38
Issue number1 B
DOIs
StatePublished - Jan 1 1999
EventProceedings of the 1998 International Symposium on Formation, Physics and Device Application of Quantum Dot Structures, QDS-98 - Sapporo, Japan
Duration: May 31 1998Jun 4 1998

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Keywords

  • Coulomb blockade
  • MOSFET
  • Quantum dots
  • Silicon quantum dot
  • Single electron transistors

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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