Silicon Quantum Dot in a Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) Structure

Maroun Khoury, Allen Gunther, David P. Pivin, Mary Jo Rack, David K. Ferry

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

We have fabricated a 200 nm quantum dot in a silicon Metal-Oxidc-Semiconductor Field Effect Transistor (MOSFET) structure. Confining gates situated on top of a 10 nm oxide deplete the electron gas created by an inversion gate 70 nm away from the Si-SiO2 interface. Measurements indicate that the size of the dot can be tuned by the gates. Furthermore, we observe conductance fluctuations in the gate characteristic which are indicative of single-electron behavior.

Original languageEnglish (US)
Pages (from-to)469-472
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume38
Issue number1 B
StatePublished - 1999

Fingerprint

MESFET devices
Electron gas
MOSFET devices
metal oxide semiconductors
Semiconductor quantum dots
field effect transistors
quantum dots
Silicon
Oxides
Electrons
silicon
confining
electron gas
inversions
oxides
metals
electrons

Keywords

  • Coulomb blockade
  • MOSFET
  • Quantum dots
  • Silicon quantum dot
  • Single electron transistors

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Engineering(all)

Cite this

Silicon Quantum Dot in a Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) Structure. / Khoury, Maroun; Gunther, Allen; Pivin, David P.; Rack, Mary Jo; Ferry, David K.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 38, No. 1 B, 1999, p. 469-472.

Research output: Contribution to journalArticle

Khoury, Maroun ; Gunther, Allen ; Pivin, David P. ; Rack, Mary Jo ; Ferry, David K. / Silicon Quantum Dot in a Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) Structure. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 1999 ; Vol. 38, No. 1 B. pp. 469-472.
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