Silicon Quantum Dot in a Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) Structure

Maroun Khoury; Allen Gunther; David P. Pivin; Mary Jo Rack; David K. Ferry

doi:10.1143/JJAP.38.469

Silicon Quantum Dot in a Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) Structure

Maroun Khoury, Allen Gunther, David P. Pivin, Mary Jo Rack, David K. Ferry

Research output: Contribution to journal › Conference article › peer-review

12 Scopus citations

Abstract

We have fabricated a 200 nm quantum dot in a silicon Metal-Oxidc-Semiconductor Field Effect Transistor (MOSFET) structure. Confining gates situated on top of a 10 nm oxide deplete the electron gas created by an inversion gate 70 nm away from the Si-SiO₂ interface. Measurements indicate that the size of the dot can be tuned by the gates. Furthermore, we observe conductance fluctuations in the gate characteristic which are indicative of single-electron behavior.

Original language	English (US)
Pages (from-to)	469-472
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	38
Issue number	1 B
DOIs	https://doi.org/10.1143/JJAP.38.469
State	Published - 1999
Event	Proceedings of the 1998 International Symposium on Formation, Physics and Device Application of Quantum Dot Structures, QDS-98 - Sapporo, Japan Duration: May 31 1998 → Jun 4 1998

Keywords

Coulomb blockade
MOSFET
Quantum dots
Silicon quantum dot
Single electron transistors

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

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10.1143/JJAP.38.469

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title = "Silicon Quantum Dot in a Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) Structure",

abstract = "We have fabricated a 200 nm quantum dot in a silicon Metal-Oxidc-Semiconductor Field Effect Transistor (MOSFET) structure. Confining gates situated on top of a 10 nm oxide deplete the electron gas created by an inversion gate 70 nm away from the Si-SiO2 interface. Measurements indicate that the size of the dot can be tuned by the gates. Furthermore, we observe conductance fluctuations in the gate characteristic which are indicative of single-electron behavior.",

keywords = "Coulomb blockade, MOSFET, Quantum dots, Silicon quantum dot, Single electron transistors",

author = "Maroun Khoury and Allen Gunther and Pivin, {David P.} and Rack, {Mary Jo} and Ferry, {David K.}",

year = "1999",

doi = "10.1143/JJAP.38.469",

language = "English (US)",

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pages = "469--472",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "1 B",

note = "Proceedings of the 1998 International Symposium on Formation, Physics and Device Application of Quantum Dot Structures, QDS-98 ; Conference date: 31-05-1998 Through 04-06-1998",

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T1 - Silicon Quantum Dot in a Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) Structure

AU - Khoury, Maroun

AU - Gunther, Allen

AU - Pivin, David P.

AU - Rack, Mary Jo

AU - Ferry, David K.

PY - 1999

Y1 - 1999

N2 - We have fabricated a 200 nm quantum dot in a silicon Metal-Oxidc-Semiconductor Field Effect Transistor (MOSFET) structure. Confining gates situated on top of a 10 nm oxide deplete the electron gas created by an inversion gate 70 nm away from the Si-SiO2 interface. Measurements indicate that the size of the dot can be tuned by the gates. Furthermore, we observe conductance fluctuations in the gate characteristic which are indicative of single-electron behavior.

AB - We have fabricated a 200 nm quantum dot in a silicon Metal-Oxidc-Semiconductor Field Effect Transistor (MOSFET) structure. Confining gates situated on top of a 10 nm oxide deplete the electron gas created by an inversion gate 70 nm away from the Si-SiO2 interface. Measurements indicate that the size of the dot can be tuned by the gates. Furthermore, we observe conductance fluctuations in the gate characteristic which are indicative of single-electron behavior.

KW - Coulomb blockade

KW - MOSFET

KW - Quantum dots

KW - Silicon quantum dot

KW - Single electron transistors

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EP - 472

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 1 B

T2 - Proceedings of the 1998 International Symposium on Formation, Physics and Device Application of Quantum Dot Structures, QDS-98

Y2 - 31 May 1998 through 4 June 1998

ER -

Silicon Quantum Dot in a Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) Structure

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Keywords

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