Abstract

CMOS compatible, high voltage SOI MESFETs have been fabricated using a standard 3.3 V CMOS process without any changes to the process flow. A 0.6 μm gate length device operates with a cut-off frequency of 7.3 GHz and a maximum oscillation frequency of 21 GHz. There is no degradation in device performance up to its breakdown voltage, which greatly exceeds that of CMOS devices on the same process. Other figures-of-merit of relevance to RF front-end design are presented, including the maximum stable gain and noise figure. An accurate representation of the device in SPICE has been developed using the commercially available TOM3 model. Using the SOI MESFET model, a source degenerated low noise RF amplifier targeting operation near 1 GHz has been designed. The amplifier was fabricated on a PCB board and operates at 940 MHz with a minimum NF of 3.8 dB and RF gain of 9.9 dB while only consuming 5mW of DC power.

Original languageEnglish (US)
Pages (from-to)336-342
Number of pages7
JournalSolid-State Electronics
Volume54
Issue number3
DOIs
StatePublished - Mar 2010

Fingerprint

Silicon
field effect transistors
amplifiers
insulators
CMOS
Polychlorinated Biphenyls
SOI (semiconductors)
Noise figure
Cutoff frequency
silicon
SPICE
Polychlorinated biphenyls
Electric breakdown
Degradation
polychlorinated biphenyls
Electric potential
electrical faults
figure of merit
low noise
high voltages

Keywords

  • Low-noise amplifier
  • MESFET
  • Silicon on insulator technology
  • Source degenerated
  • TOM3

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

Cite this

Silicon on insulator MESFETs for RF amplifiers. / Wilk, Seth J.; Balijepalli, Asha; Ervin, Joseph; Lepkowski, William; Thornton, Trevor.

In: Solid-State Electronics, Vol. 54, No. 3, 03.2010, p. 336-342.

Research output: Contribution to journalArticle

Wilk, SJ, Balijepalli, A, Ervin, J, Lepkowski, W & Thornton, T 2010, 'Silicon on insulator MESFETs for RF amplifiers', Solid-State Electronics, vol. 54, no. 3, pp. 336-342. https://doi.org/10.1016/j.sse.2009.10.016
Wilk, Seth J. ; Balijepalli, Asha ; Ervin, Joseph ; Lepkowski, William ; Thornton, Trevor. / Silicon on insulator MESFETs for RF amplifiers. In: Solid-State Electronics. 2010 ; Vol. 54, No. 3. pp. 336-342.
@article{83e75fa172cb4e9e97db2416094e89cd,
title = "Silicon on insulator MESFETs for RF amplifiers",
abstract = "CMOS compatible, high voltage SOI MESFETs have been fabricated using a standard 3.3 V CMOS process without any changes to the process flow. A 0.6 μm gate length device operates with a cut-off frequency of 7.3 GHz and a maximum oscillation frequency of 21 GHz. There is no degradation in device performance up to its breakdown voltage, which greatly exceeds that of CMOS devices on the same process. Other figures-of-merit of relevance to RF front-end design are presented, including the maximum stable gain and noise figure. An accurate representation of the device in SPICE has been developed using the commercially available TOM3 model. Using the SOI MESFET model, a source degenerated low noise RF amplifier targeting operation near 1 GHz has been designed. The amplifier was fabricated on a PCB board and operates at 940 MHz with a minimum NF of 3.8 dB and RF gain of 9.9 dB while only consuming 5mW of DC power.",
keywords = "Low-noise amplifier, MESFET, Silicon on insulator technology, Source degenerated, TOM3",
author = "Wilk, {Seth J.} and Asha Balijepalli and Joseph Ervin and William Lepkowski and Trevor Thornton",
year = "2010",
month = "3",
doi = "10.1016/j.sse.2009.10.016",
language = "English (US)",
volume = "54",
pages = "336--342",
journal = "Solid-State Electronics",
issn = "0038-1101",
publisher = "Elsevier Limited",
number = "3",

}

TY - JOUR

T1 - Silicon on insulator MESFETs for RF amplifiers

AU - Wilk, Seth J.

AU - Balijepalli, Asha

AU - Ervin, Joseph

AU - Lepkowski, William

AU - Thornton, Trevor

PY - 2010/3

Y1 - 2010/3

N2 - CMOS compatible, high voltage SOI MESFETs have been fabricated using a standard 3.3 V CMOS process without any changes to the process flow. A 0.6 μm gate length device operates with a cut-off frequency of 7.3 GHz and a maximum oscillation frequency of 21 GHz. There is no degradation in device performance up to its breakdown voltage, which greatly exceeds that of CMOS devices on the same process. Other figures-of-merit of relevance to RF front-end design are presented, including the maximum stable gain and noise figure. An accurate representation of the device in SPICE has been developed using the commercially available TOM3 model. Using the SOI MESFET model, a source degenerated low noise RF amplifier targeting operation near 1 GHz has been designed. The amplifier was fabricated on a PCB board and operates at 940 MHz with a minimum NF of 3.8 dB and RF gain of 9.9 dB while only consuming 5mW of DC power.

AB - CMOS compatible, high voltage SOI MESFETs have been fabricated using a standard 3.3 V CMOS process without any changes to the process flow. A 0.6 μm gate length device operates with a cut-off frequency of 7.3 GHz and a maximum oscillation frequency of 21 GHz. There is no degradation in device performance up to its breakdown voltage, which greatly exceeds that of CMOS devices on the same process. Other figures-of-merit of relevance to RF front-end design are presented, including the maximum stable gain and noise figure. An accurate representation of the device in SPICE has been developed using the commercially available TOM3 model. Using the SOI MESFET model, a source degenerated low noise RF amplifier targeting operation near 1 GHz has been designed. The amplifier was fabricated on a PCB board and operates at 940 MHz with a minimum NF of 3.8 dB and RF gain of 9.9 dB while only consuming 5mW of DC power.

KW - Low-noise amplifier

KW - MESFET

KW - Silicon on insulator technology

KW - Source degenerated

KW - TOM3

UR - http://www.scopus.com/inward/record.url?scp=76449095009&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=76449095009&partnerID=8YFLogxK

U2 - 10.1016/j.sse.2009.10.016

DO - 10.1016/j.sse.2009.10.016

M3 - Article

AN - SCOPUS:76449095009

VL - 54

SP - 336

EP - 342

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

IS - 3

ER -