Abstract

Metal-semiconductor field-effect-transistors (MESFETs) have been fabricated using a commercially available 45nm silicon-on-insulator (SOI) CMOS foundry with no changes to the process flow. Depending upon the layout dimensions, these n-channel, depletion mode devices can be designed for high current drive (IDSAT ≥ 100mA/mm), high operating frequency (f max > 35 GHz) or enhanced breakdown voltage (VBD > 25V). The design flexibility provided by the SOI MESFETs, coupled with the high performance of ULSI CMOS at the 45nm node will enable a variety of analog, RF and mixed signal applications.

Original languageEnglish (US)
Article number1250012
JournalInternational Journal of High Speed Electronics and Systems
Volume21
Issue number1
DOIs
StatePublished - Mar 1 2012

Keywords

  • MESFETs
  • Silicon on Insulator
  • Spice models

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Hardware and Architecture
  • Electrical and Electronic Engineering

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