Abstract

Metal-semiconductor field-effect-transistors (MESFETs) have been fabricated using a commercially available 45nm silicon-on-insulator (SOI) CMOS foundry with no changes to the process flow. Depending upon the layout dimensions, these n-channel, depletion mode devices can be designed for high current drive (ID SAT ≥ 100mA/mm), high operating frequency (f max > 35 GHz) or enhanced breakdown voltage (VBD > 25V). The design flexibility provided by the SOI MESFETs, coupled with the high performance of ULSI CMOS at the 45nm node will enable a variety of analog, RF and mixed signal applications.

Original languageEnglish (US)
Article number1250012
JournalInternational Journal of High Speed Electronics and Systems
Volume21
Issue number1
DOIs
StatePublished - Mar 2012

Fingerprint

Silicon
MISFET devices
MESFET devices
Foundries
Electric breakdown

Keywords

  • MESFETs
  • Silicon on Insulator
  • Spice models

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Hardware and Architecture
  • Electronic, Optical and Magnetic Materials

Cite this

Silicon-on-insulator mesfets at the 45NM node. / Lepkowski, William; Wilk, Seth J.; Ghajar, M. Reza; Parsi, Anuradha; Thornton, Trevor.

In: International Journal of High Speed Electronics and Systems, Vol. 21, No. 1, 1250012, 03.2012.

Research output: Contribution to journalArticle

Lepkowski, William ; Wilk, Seth J. ; Ghajar, M. Reza ; Parsi, Anuradha ; Thornton, Trevor. / Silicon-on-insulator mesfets at the 45NM node. In: International Journal of High Speed Electronics and Systems. 2012 ; Vol. 21, No. 1.
@article{08d2022ae5d14b14af6806becf414dd6,
title = "Silicon-on-insulator mesfets at the 45NM node",
abstract = "Metal-semiconductor field-effect-transistors (MESFETs) have been fabricated using a commercially available 45nm silicon-on-insulator (SOI) CMOS foundry with no changes to the process flow. Depending upon the layout dimensions, these n-channel, depletion mode devices can be designed for high current drive (ID SAT ≥ 100mA/mm), high operating frequency (f max > 35 GHz) or enhanced breakdown voltage (VBD > 25V). The design flexibility provided by the SOI MESFETs, coupled with the high performance of ULSI CMOS at the 45nm node will enable a variety of analog, RF and mixed signal applications.",
keywords = "MESFETs, Silicon on Insulator, Spice models",
author = "William Lepkowski and Wilk, {Seth J.} and Ghajar, {M. Reza} and Anuradha Parsi and Trevor Thornton",
year = "2012",
month = "3",
doi = "10.1142/S0129156412500127",
language = "English (US)",
volume = "21",
journal = "International Journal of High Speed Electronics and Systems",
issn = "0129-1564",
publisher = "World Scientific Publishing Co. Pte Ltd",
number = "1",

}

TY - JOUR

T1 - Silicon-on-insulator mesfets at the 45NM node

AU - Lepkowski, William

AU - Wilk, Seth J.

AU - Ghajar, M. Reza

AU - Parsi, Anuradha

AU - Thornton, Trevor

PY - 2012/3

Y1 - 2012/3

N2 - Metal-semiconductor field-effect-transistors (MESFETs) have been fabricated using a commercially available 45nm silicon-on-insulator (SOI) CMOS foundry with no changes to the process flow. Depending upon the layout dimensions, these n-channel, depletion mode devices can be designed for high current drive (ID SAT ≥ 100mA/mm), high operating frequency (f max > 35 GHz) or enhanced breakdown voltage (VBD > 25V). The design flexibility provided by the SOI MESFETs, coupled with the high performance of ULSI CMOS at the 45nm node will enable a variety of analog, RF and mixed signal applications.

AB - Metal-semiconductor field-effect-transistors (MESFETs) have been fabricated using a commercially available 45nm silicon-on-insulator (SOI) CMOS foundry with no changes to the process flow. Depending upon the layout dimensions, these n-channel, depletion mode devices can be designed for high current drive (ID SAT ≥ 100mA/mm), high operating frequency (f max > 35 GHz) or enhanced breakdown voltage (VBD > 25V). The design flexibility provided by the SOI MESFETs, coupled with the high performance of ULSI CMOS at the 45nm node will enable a variety of analog, RF and mixed signal applications.

KW - MESFETs

KW - Silicon on Insulator

KW - Spice models

UR - http://www.scopus.com/inward/record.url?scp=84871602473&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84871602473&partnerID=8YFLogxK

U2 - 10.1142/S0129156412500127

DO - 10.1142/S0129156412500127

M3 - Article

AN - SCOPUS:84871602473

VL - 21

JO - International Journal of High Speed Electronics and Systems

JF - International Journal of High Speed Electronics and Systems

SN - 0129-1564

IS - 1

M1 - 1250012

ER -