Abstract
Metal-semiconductor field-effect-transistors (MESFETs) have been fabricated using a commercially available 45nm silicon-on-insulator (SOI) CMOS foundry with no changes to the process flow. Depending upon the layout dimensions, these n-channel, depletion mode devices can be designed for high current drive (IDSAT ≥ 100mA/mm), high operating frequency (f max > 35 GHz) or enhanced breakdown voltage (VBD > 25V). The design flexibility provided by the SOI MESFETs, coupled with the high performance of ULSI CMOS at the 45nm node will enable a variety of analog, RF and mixed signal applications.
Original language | English (US) |
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Article number | 1250012 |
Journal | International Journal of High Speed Electronics and Systems |
Volume | 21 |
Issue number | 1 |
DOIs | |
State | Published - Mar 2012 |
Keywords
- MESFETs
- Silicon on Insulator
- Spice models
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Hardware and Architecture
- Electrical and Electronic Engineering