Abstract
Metal-semiconductor field-effect-transistors (MESFETs) have been fabricated using a commercially available 45nm silicon-on-insulator (SOI) CMOS foundry with no changes to the process flow. Depending upon the layout dimensions, these n-channel, depletion mode devices can be designed for high current drive (IDSAT ≥ 100mA/mm), high operating frequency (f max > 35 GHz) or enhanced breakdown voltage (VBD > 25V). The design flexibility provided by the SOI MESFETs, coupled with the high performance of ULSI CMOS at the 45nm node will enable a variety of analog, RF and mixed signal applications.
| Original language | English (US) |
|---|---|
| Article number | 1250012 |
| Journal | International Journal of High Speed Electronics and Systems |
| Volume | 21 |
| Issue number | 1 |
| DOIs | |
| State | Published - Mar 1 2012 |
Keywords
- MESFETs
- Silicon on Insulator
- Spice models
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Hardware and Architecture
- Electrical and Electronic Engineering
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Lepkowski, W., Wilk, S. J., Ghajar, M. R., Parsi, A., & Thornton, T. (2012). Silicon-on-insulator mesfets at the 45NM node. International Journal of High Speed Electronics and Systems, 21(1), [1250012]. https://doi.org/10.1142/S0129156412500127