Silicon-on-insulator mesfets at the 45NM node

William Lepkowski; Seth J. Wilk; M. Reza Ghajar; Anuradha Parsi; Trevor Thornton

doi:10.1142/S0129156412500127

Silicon-on-insulator mesfets at the 45NM node

William Lepkowski, Seth J. Wilk, M. Reza Ghajar, Anuradha Parsi, Trevor Thornton

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Metal-semiconductor field-effect-transistors (MESFETs) have been fabricated using a commercially available 45nm silicon-on-insulator (SOI) CMOS foundry with no changes to the process flow. Depending upon the layout dimensions, these n-channel, depletion mode devices can be designed for high current drive (I_D^SAT ≥ 100mA/mm), high operating frequency (f _max > 35 GHz) or enhanced breakdown voltage (V_BD > 25V). The design flexibility provided by the SOI MESFETs, coupled with the high performance of ULSI CMOS at the 45nm node will enable a variety of analog, RF and mixed signal applications.

Original language	English (US)
Article number	1250012
Journal	International Journal of High Speed Electronics and Systems
Volume	21
Issue number	1
DOIs	https://doi.org/10.1142/S0129156412500127
State	Published - Mar 2012

Keywords

MESFETs
Silicon on Insulator
Spice models

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Hardware and Architecture
Electrical and Electronic Engineering

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10.1142/S0129156412500127

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title = "Silicon-on-insulator mesfets at the 45NM node",

abstract = "Metal-semiconductor field-effect-transistors (MESFETs) have been fabricated using a commercially available 45nm silicon-on-insulator (SOI) CMOS foundry with no changes to the process flow. Depending upon the layout dimensions, these n-channel, depletion mode devices can be designed for high current drive (IDSAT ≥ 100mA/mm), high operating frequency (f max > 35 GHz) or enhanced breakdown voltage (VBD > 25V). The design flexibility provided by the SOI MESFETs, coupled with the high performance of ULSI CMOS at the 45nm node will enable a variety of analog, RF and mixed signal applications.",

keywords = "MESFETs, Silicon on Insulator, Spice models",

author = "William Lepkowski and Wilk, {Seth J.} and Ghajar, {M. Reza} and Anuradha Parsi and Trevor Thornton",

note = "Funding Information: Access to the IBM 45nm SOI CMOS technology was provided through the Trusted Access Programs Office (TAPO) and with support from a DARPA STTR contract # W31P4Q-10-C-0020. The development of the MESFET technology for linear regulator applications was supported by NASA through SBIR contract # NNX11CC01C.",

year = "2012",

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doi = "10.1142/S0129156412500127",

language = "English (US)",

volume = "21",

journal = "International Journal of High Speed Electronics and Systems",

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AU - Ghajar, M. Reza

AU - Parsi, Anuradha

AU - Thornton, Trevor

N1 - Funding Information: Access to the IBM 45nm SOI CMOS technology was provided through the Trusted Access Programs Office (TAPO) and with support from a DARPA STTR contract # W31P4Q-10-C-0020. The development of the MESFET technology for linear regulator applications was supported by NASA through SBIR contract # NNX11CC01C.

PY - 2012/3

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N2 - Metal-semiconductor field-effect-transistors (MESFETs) have been fabricated using a commercially available 45nm silicon-on-insulator (SOI) CMOS foundry with no changes to the process flow. Depending upon the layout dimensions, these n-channel, depletion mode devices can be designed for high current drive (IDSAT ≥ 100mA/mm), high operating frequency (f max > 35 GHz) or enhanced breakdown voltage (VBD > 25V). The design flexibility provided by the SOI MESFETs, coupled with the high performance of ULSI CMOS at the 45nm node will enable a variety of analog, RF and mixed signal applications.

AB - Metal-semiconductor field-effect-transistors (MESFETs) have been fabricated using a commercially available 45nm silicon-on-insulator (SOI) CMOS foundry with no changes to the process flow. Depending upon the layout dimensions, these n-channel, depletion mode devices can be designed for high current drive (IDSAT ≥ 100mA/mm), high operating frequency (f max > 35 GHz) or enhanced breakdown voltage (VBD > 25V). The design flexibility provided by the SOI MESFETs, coupled with the high performance of ULSI CMOS at the 45nm node will enable a variety of analog, RF and mixed signal applications.

KW - MESFETs

KW - Silicon on Insulator

KW - Spice models

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Silicon-on-insulator mesfets at the 45NM node

Abstract

Keywords

ASJC Scopus subject areas

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