Silicon Nitride Barrier Layers Mitigate Minority-Carrier Lifetime Degradation in Silicon Wafers during Simulated MBE Growth of III-V Layers

Engineering & Materials Science

• Carrier lifetime 97%
• Molecular beam epitaxy 95%
• Silicon nitride 74%
• Silicon wafers 74%
• Epitaxial growth 43%
• Degradation 43%
• Multi-junction solar cells 24%
• Temperature 24%
• Silicon 24%
• Diffusion barriers 22%
• Substrates 21%
• Surface reconstruction 20%
• Hydrogenation 19%
• Solar cells 16%
• Oxidation 13%
• Coatings 11%
• Recovery 10%
• Metals 9%

Chemical Compounds

• Gettering 100%
• Molecular Beam Epitaxy 88%
• Epitaxial Growth 75%
• Nitride 59%
• Solar Cell 53%
• Surface Reconstruction 42%
• Surface Temperature 40%
• Diffusion Barrier 38%
• Diffusion 38%
• Hydrogenation 22%
• Coating Agent 18%
• Metal 13%
• Surface 9%

Physics & Astronomy

• barrier layers 66%
• carrier lifetime 65%
• minority carriers 65%
• silicon nitrides 60%
• molecular beam epitaxy 52%
• wafers 46%
• silicon 33%
• chambers 24%
• solar cells 22%
• life (durability) 21%
• hydrogenation 16%
• temperature 13%
• recovery 12%
• oxidation 11%
• coatings 10%
• cycles 10%
• metals 7%
• performance 6%