Silicon nano-fabrication by using silica nanosphere lithography technique for enhanced light management

Jea Young Choi, Christiana Honsberg

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We present a complete silicon (Si) nano-fabrication process to provide controlled shapes of nanostructures over large-scale Si surface area by combining our novel solvent controlled silica nanosphere (SNS) spin-coating method with reactive ion etching. Our novel spin-coating method shows that the introduction of N, N-dimethyl-formamide solvent for SNS spin-coating can greatly enhance the uniformity of spin-coated 2-dimensional SNS layer and its coverage with significantly less sensitivity to deposition area. The enhanced quality and coverage of SNS provided excellent nano-patterning for diverse etching applications. With our SNS lithography, reactive ion etching (RIE) has been applied with fluorine (F) and chlorine (Cl) based gases to provide (1) controlled etching selectivity between SNS (SiO2) and Si substrate and (2) desired etching orientation depending on target shape of structure. Here we focus on the fabrication of Si nanopillar structures with various top diameters but fixed height which show significantly improved anti-reflection effect. In addition, computational optical modeling with rigorous coupled wave analysis (RCWA) shows that well-tapered nanocone structures can provide greatly reduced incident light angle dependence for surface reflection.

Original languageEnglish (US)
Title of host publication2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2206-2208
Number of pages3
ISBN (Print)9781479943982
DOIs
StatePublished - Oct 15 2014
Event40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States
Duration: Jun 8 2014Jun 13 2014

Other

Other40th IEEE Photovoltaic Specialist Conference, PVSC 2014
CountryUnited States
CityDenver
Period6/8/146/13/14

Fingerprint

Nanospheres
Silicon
Nanotechnology
Silicon Dioxide
Lithography
Silica
Spin coating
Etching
Reactive ion etching
Dimethylformamide
Fluorine
Chlorine
Nanostructures
Gases
Fabrication
Substrates

Keywords

  • incident angle
  • Nano-fabriation
  • reactive ion etching
  • rigorous coupled wave analysis
  • silica nanosphere
  • silicon
  • surface reflection

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Choi, J. Y., & Honsberg, C. (2014). Silicon nano-fabrication by using silica nanosphere lithography technique for enhanced light management. In 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014 (pp. 2206-2208). [6925363] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2014.6925363

Silicon nano-fabrication by using silica nanosphere lithography technique for enhanced light management. / Choi, Jea Young; Honsberg, Christiana.

2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 2206-2208 6925363.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Choi, JY & Honsberg, C 2014, Silicon nano-fabrication by using silica nanosphere lithography technique for enhanced light management. in 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014., 6925363, Institute of Electrical and Electronics Engineers Inc., pp. 2206-2208, 40th IEEE Photovoltaic Specialist Conference, PVSC 2014, Denver, United States, 6/8/14. https://doi.org/10.1109/PVSC.2014.6925363
Choi JY, Honsberg C. Silicon nano-fabrication by using silica nanosphere lithography technique for enhanced light management. In 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 2206-2208. 6925363 https://doi.org/10.1109/PVSC.2014.6925363
Choi, Jea Young ; Honsberg, Christiana. / Silicon nano-fabrication by using silica nanosphere lithography technique for enhanced light management. 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 2206-2208
@inproceedings{b0c1aa70e37749e0a45daef8c3432b2c,
title = "Silicon nano-fabrication by using silica nanosphere lithography technique for enhanced light management",
abstract = "We present a complete silicon (Si) nano-fabrication process to provide controlled shapes of nanostructures over large-scale Si surface area by combining our novel solvent controlled silica nanosphere (SNS) spin-coating method with reactive ion etching. Our novel spin-coating method shows that the introduction of N, N-dimethyl-formamide solvent for SNS spin-coating can greatly enhance the uniformity of spin-coated 2-dimensional SNS layer and its coverage with significantly less sensitivity to deposition area. The enhanced quality and coverage of SNS provided excellent nano-patterning for diverse etching applications. With our SNS lithography, reactive ion etching (RIE) has been applied with fluorine (F) and chlorine (Cl) based gases to provide (1) controlled etching selectivity between SNS (SiO2) and Si substrate and (2) desired etching orientation depending on target shape of structure. Here we focus on the fabrication of Si nanopillar structures with various top diameters but fixed height which show significantly improved anti-reflection effect. In addition, computational optical modeling with rigorous coupled wave analysis (RCWA) shows that well-tapered nanocone structures can provide greatly reduced incident light angle dependence for surface reflection.",
keywords = "incident angle, Nano-fabriation, reactive ion etching, rigorous coupled wave analysis, silica nanosphere, silicon, surface reflection",
author = "Choi, {Jea Young} and Christiana Honsberg",
year = "2014",
month = "10",
day = "15",
doi = "10.1109/PVSC.2014.6925363",
language = "English (US)",
isbn = "9781479943982",
pages = "2206--2208",
booktitle = "2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - GEN

T1 - Silicon nano-fabrication by using silica nanosphere lithography technique for enhanced light management

AU - Choi, Jea Young

AU - Honsberg, Christiana

PY - 2014/10/15

Y1 - 2014/10/15

N2 - We present a complete silicon (Si) nano-fabrication process to provide controlled shapes of nanostructures over large-scale Si surface area by combining our novel solvent controlled silica nanosphere (SNS) spin-coating method with reactive ion etching. Our novel spin-coating method shows that the introduction of N, N-dimethyl-formamide solvent for SNS spin-coating can greatly enhance the uniformity of spin-coated 2-dimensional SNS layer and its coverage with significantly less sensitivity to deposition area. The enhanced quality and coverage of SNS provided excellent nano-patterning for diverse etching applications. With our SNS lithography, reactive ion etching (RIE) has been applied with fluorine (F) and chlorine (Cl) based gases to provide (1) controlled etching selectivity between SNS (SiO2) and Si substrate and (2) desired etching orientation depending on target shape of structure. Here we focus on the fabrication of Si nanopillar structures with various top diameters but fixed height which show significantly improved anti-reflection effect. In addition, computational optical modeling with rigorous coupled wave analysis (RCWA) shows that well-tapered nanocone structures can provide greatly reduced incident light angle dependence for surface reflection.

AB - We present a complete silicon (Si) nano-fabrication process to provide controlled shapes of nanostructures over large-scale Si surface area by combining our novel solvent controlled silica nanosphere (SNS) spin-coating method with reactive ion etching. Our novel spin-coating method shows that the introduction of N, N-dimethyl-formamide solvent for SNS spin-coating can greatly enhance the uniformity of spin-coated 2-dimensional SNS layer and its coverage with significantly less sensitivity to deposition area. The enhanced quality and coverage of SNS provided excellent nano-patterning for diverse etching applications. With our SNS lithography, reactive ion etching (RIE) has been applied with fluorine (F) and chlorine (Cl) based gases to provide (1) controlled etching selectivity between SNS (SiO2) and Si substrate and (2) desired etching orientation depending on target shape of structure. Here we focus on the fabrication of Si nanopillar structures with various top diameters but fixed height which show significantly improved anti-reflection effect. In addition, computational optical modeling with rigorous coupled wave analysis (RCWA) shows that well-tapered nanocone structures can provide greatly reduced incident light angle dependence for surface reflection.

KW - incident angle

KW - Nano-fabriation

KW - reactive ion etching

KW - rigorous coupled wave analysis

KW - silica nanosphere

KW - silicon

KW - surface reflection

UR - http://www.scopus.com/inward/record.url?scp=84912061233&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84912061233&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2014.6925363

DO - 10.1109/PVSC.2014.6925363

M3 - Conference contribution

SN - 9781479943982

SP - 2206

EP - 2208

BT - 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014

PB - Institute of Electrical and Electronics Engineers Inc.

ER -