Silicon layer transfer using plasma hydrogenation

Peng Chen, S. S. Lau, Paul K. Chu, K. Henttinen, T. Suni, I. Suni, N. David Theodore, Terry Alford, J. W. Mayer, Lin Shao, M. Nastasi

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14 Scopus citations

Abstract

In this work, we demonstrate a novel approach for the transfer of Si layers onto handle wafers, induced by plasma hydrogenation. In the conventional ion-cut process, hydrogen ion implantation is used to initiate layer delamination at a desired depth, which leads to ion damage in the transferred layer. In this study, we investigated the use of plasma hydrogenation to achieve high-quality layer transfer. To place hydrogen atoms introduced during plasma hydrogenation at a specific depth, a uniform trapping layer for H atoms must be prepared in the substrate before hydrogenation. The hydrogenated Si wafer was then bonded to another Si wafer coated with a thermal oxide, followed by thermal annealing to induce Si layer transfer. Cross-section transmission electron microscopy showed that the transferred Si layer was relatively free of lattice damage. The H trapping during plasma hydrogenation, and the subsequent layer delamination mechanism, are discussed. These results show direct evidence of the feasibility of using plasma hydrogenation to transfer relatively defect-free Si layers.

Original languageEnglish (US)
Article number111910
JournalApplied Physics Letters
Volume87
Issue number11
DOIs
StatePublished - Sep 12 2005

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Chen, P., Lau, S. S., Chu, P. K., Henttinen, K., Suni, T., Suni, I., Theodore, N. D., Alford, T., Mayer, J. W., Shao, L., & Nastasi, M. (2005). Silicon layer transfer using plasma hydrogenation. Applied Physics Letters, 87(11), [111910]. https://doi.org/10.1063/1.2048811