Silicon complementary metal-oxide-semiconductor field-effect transistor

Meng Tao, Robert M. Wallace, C. Rinn Cleavelin, Rick L. Wise

Research output: Contribution to journalArticle

Abstract

Silicon complementary metal-oxide-semiconductor field effect transistor was discussed. In digital applications such as computing and telecommunications, the CMOS inverter serves as the basic logic block with two states , 0 and 1, which correspond to the high and low states of the CMOS inverter, respectively. A significant feature of the CMOS is that it does not consume power when it is locked in a particular logic state, either 0 or 1. Future progress of the CMOS technology is encountering serious roadblocks.

Original languageEnglish (US)
Pages (from-to)26-27
Number of pages2
JournalElectrochemical Society Interface
Volume14
Issue number2
StatePublished - Jun 2005
Externally publishedYes

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MOSFET devices
Silicon
Telecommunication

ASJC Scopus subject areas

  • Chemical Engineering(all)

Cite this

Tao, M., Wallace, R. M., Cleavelin, C. R., & Wise, R. L. (2005). Silicon complementary metal-oxide-semiconductor field-effect transistor. Electrochemical Society Interface, 14(2), 26-27.

Silicon complementary metal-oxide-semiconductor field-effect transistor. / Tao, Meng; Wallace, Robert M.; Cleavelin, C. Rinn; Wise, Rick L.

In: Electrochemical Society Interface, Vol. 14, No. 2, 06.2005, p. 26-27.

Research output: Contribution to journalArticle

Tao, M, Wallace, RM, Cleavelin, CR & Wise, RL 2005, 'Silicon complementary metal-oxide-semiconductor field-effect transistor', Electrochemical Society Interface, vol. 14, no. 2, pp. 26-27.
Tao, Meng ; Wallace, Robert M. ; Cleavelin, C. Rinn ; Wise, Rick L. / Silicon complementary metal-oxide-semiconductor field-effect transistor. In: Electrochemical Society Interface. 2005 ; Vol. 14, No. 2. pp. 26-27.
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