Silicon complementary metal-oxide-semiconductor field-effect transistor

Meng Tao, Robert M. Wallace, C. Rinn Cleavelin, Rick L. Wise

Research output: Contribution to journalReview article

Abstract

Silicon complementary metal-oxide-semiconductor field effect transistor was discussed. In digital applications such as computing and telecommunications, the CMOS inverter serves as the basic logic block with two states , 0 and 1, which correspond to the high and low states of the CMOS inverter, respectively. A significant feature of the CMOS is that it does not consume power when it is locked in a particular logic state, either 0 or 1. Future progress of the CMOS technology is encountering serious roadblocks.

Original languageEnglish (US)
Pages (from-to)26-27
Number of pages2
JournalElectrochemical Society Interface
Volume14
Issue number2
StatePublished - Jun 1 2005
Externally publishedYes

ASJC Scopus subject areas

  • Electrochemistry

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  • Cite this

    Tao, M., Wallace, R. M., Cleavelin, C. R., & Wise, R. L. (2005). Silicon complementary metal-oxide-semiconductor field-effect transistor. Electrochemical Society Interface, 14(2), 26-27.