Silicon-based integrated MOSFETS and MESFETS: A new paradigm for low power, mixed signal, monolithic systems using commercially available SOI

Jinman Yang, Asha Balijepalli, Trevor Thornton, James Vandersand, Benjamin J. Blalock, Michael E. Wood, Mohammad M. Mojarradi

Research output: Contribution to journalArticle

20 Scopus citations


Metal Semiconductor Field Effect Transistors fabricated using compound semiconductor materials have important applications in high-speed/low-noise communication systems. However, their integration densities are low compared to silicon technologies, and it is difficult to combine them with conventional CMOS for single-chip, mixed-signal circuit applications. In this paper we describe how silicon-on-insulator MESFETs can be fabricated alongside conventional MOSFETs using a commercially available silicon-on-insulator foundry. The process flow for the integrated MOSFETS and MESFETs is presented. Measurements from MESFETs fabricated using a commercial foundry demonstrate good depletion-mode device operation. The measured data confirms a square-law behavior for the saturated drain current, which can be reproduced using readily available MESFET models for Spice circuit simulation. The Spice model is applied to a simple differential-pair amplifier and the modeled results compared to measured data.

Original languageEnglish (US)
Pages (from-to)723-732
Number of pages10
JournalInternational Journal of High Speed Electronics and Systems
Issue number2
StatePublished - Jun 1 2006



  • Silicon on insulator
  • Spice models

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Hardware and Architecture
  • Electrical and Electronic Engineering

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