Silicon-Based Cooling Elements

David Leadley, Martin Prest, Jouni Ahopelto, Tom Brien, David Gunnarsson, Philip Mauskopf, Juha Muhonen, Maksym Myronov, Hung Nguyen, Evan Parker, Mika Prunnila, James Richardson-Bullock, Vishal Shah, Terry Whall, Qing Tai Zhao

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

This chapter presents an introduction to superconductor-semiconductor (S-Sm) tunnel junction coolers, before outlining some of the progresses made during the nanofunction program on electron cooling from 300 mK in silicon-based junctions. PtSi is an interesting material to consider as a Schottky barrier to Si because of its role as a contact material in the semiconductor industry. The chapter investigates carrier-phonon coupling in unstrained silicon, with both n- and p-type dopants, and the effect of increasing the strain in silicon grown on a Si1-xGex virtual substrate with the Ge fraction x of 20% and 30%. The reduction in e-ph coupling shows promise for dramatic improvements in performance of bolometric detectors for a variety of electromagnetic radiation sensing applications using silicon based cold electron bolometers.

Original languageEnglish (US)
Title of host publicationBeyond CMOS Nanodevices 1
PublisherWiley-Blackwell
Pages303-330
Number of pages28
Volume9781848216549
ISBN (Electronic)9781118984772
ISBN (Print)9781848216549
DOIs
StatePublished - Jun 23 2014

Keywords

  • Carrier-phonon coupling
  • Silicon cold electron bolometer
  • Silicon-based Schottky barrier junctions
  • Superconductor-semiconductor (S-Sm) cooler
  • Unstrained silicon

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Leadley, D., Prest, M., Ahopelto, J., Brien, T., Gunnarsson, D., Mauskopf, P., Muhonen, J., Myronov, M., Nguyen, H., Parker, E., Prunnila, M., Richardson-Bullock, J., Shah, V., Whall, T., & Zhao, Q. T. (2014). Silicon-Based Cooling Elements. In Beyond CMOS Nanodevices 1 (Vol. 9781848216549, pp. 303-330). Wiley-Blackwell. https://doi.org/10.1002/9781118984772.ch11