Silicide/Polysilicon Layer Formation Using Dynamic Recoil Mixing

Michael Kozicki; J. M. Robertson; H. Kheyrandish; A. E. Hill

doi:10.1149/1.2096761

Silicide/Polysilicon Layer Formation Using Dynamic Recoil Mixing

Michael Kozicki, J. M. Robertson, H. Kheyrandish, A. E. Hill

Electrical Engineering

Research output: Contribution to journal › Article › peer-review

Original language	English (US)
Pages (from-to)	873-875
Number of pages	3
Journal	Journal of the Electrochemical Society
Volume	136
Issue number	3
DOIs	https://doi.org/10.1149/1.2096761
State	Published - Mar 1989

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

Access to Document

10.1149/1.2096761

Cite this

@article{f98a2353bb40488aae28285c4a42e9a6,

title = "Silicide/Polysilicon Layer Formation Using Dynamic Recoil Mixing",

author = "Michael Kozicki and Robertson, {J. M.} and H. Kheyrandish and Hill, {A. E.}",

year = "1989",

month = mar,

doi = "10.1149/1.2096761",

language = "English (US)",

volume = "136",

pages = "873--875",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Electrochemical Society, Inc.",

number = "3",

}

TY - JOUR

T1 - Silicide/Polysilicon Layer Formation Using Dynamic Recoil Mixing

AU - Kozicki, Michael

AU - Robertson, J. M.

AU - Kheyrandish, H.

AU - Hill, A. E.

PY - 1989/3

Y1 - 1989/3

UR - http://www.scopus.com/inward/record.url?scp=0024620742&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0024620742&partnerID=8YFLogxK

U2 - 10.1149/1.2096761

DO - 10.1149/1.2096761

M3 - Article

AN - SCOPUS:0024620742

SN - 0013-4651

VL - 136

SP - 873

EP - 875

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 3

ER -

Silicide/Polysilicon Layer Formation Using Dynamic Recoil Mixing

ASJC Scopus subject areas

Access to Document

Other files and links

Cite this