Silicide formation in Pd-a-Si

H Schottky barriers

M. J. Thompson, N. M. Johnson, Robert Nemanich, C. C. Tsai

Research output: Contribution to journalArticle

40 Citations (Scopus)

Abstract

This letter gives the first report of a direct correlation of Schottky barrier characteristics to silicide growth on a-Si:H. Changes in diode ideality factor (from 1.2 to 1.05) produced by annealing can now be directly attributed to growth of Pd2Si as demonstrated by Raman spectroscopy. Unannealed samples show long-term changes in characteristics at room temperature due to slow silicide growth. However, Pd Schottky barriers possess ideal stable characteristics once silicide growth is complete.

Original languageEnglish (US)
Pages (from-to)274-276
Number of pages3
JournalApplied Physics Letters
Volume39
Issue number3
DOIs
StatePublished - 1981
Externally publishedYes

Fingerprint

Raman spectroscopy
diodes
annealing
room temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Silicide formation in Pd-a-Si : H Schottky barriers. / Thompson, M. J.; Johnson, N. M.; Nemanich, Robert; Tsai, C. C.

In: Applied Physics Letters, Vol. 39, No. 3, 1981, p. 274-276.

Research output: Contribution to journalArticle

Thompson, MJ, Johnson, NM, Nemanich, R & Tsai, CC 1981, 'Silicide formation in Pd-a-Si: H Schottky barriers', Applied Physics Letters, vol. 39, no. 3, pp. 274-276. https://doi.org/10.1063/1.92670
Thompson, M. J. ; Johnson, N. M. ; Nemanich, Robert ; Tsai, C. C. / Silicide formation in Pd-a-Si : H Schottky barriers. In: Applied Physics Letters. 1981 ; Vol. 39, No. 3. pp. 274-276.
@article{6c9fae6f79be4cba9b849f0e352dcf4c,
title = "Silicide formation in Pd-a-Si: H Schottky barriers",
abstract = "This letter gives the first report of a direct correlation of Schottky barrier characteristics to silicide growth on a-Si:H. Changes in diode ideality factor (from 1.2 to 1.05) produced by annealing can now be directly attributed to growth of Pd2Si as demonstrated by Raman spectroscopy. Unannealed samples show long-term changes in characteristics at room temperature due to slow silicide growth. However, Pd Schottky barriers possess ideal stable characteristics once silicide growth is complete.",
author = "Thompson, {M. J.} and Johnson, {N. M.} and Robert Nemanich and Tsai, {C. C.}",
year = "1981",
doi = "10.1063/1.92670",
language = "English (US)",
volume = "39",
pages = "274--276",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "3",

}

TY - JOUR

T1 - Silicide formation in Pd-a-Si

T2 - H Schottky barriers

AU - Thompson, M. J.

AU - Johnson, N. M.

AU - Nemanich, Robert

AU - Tsai, C. C.

PY - 1981

Y1 - 1981

N2 - This letter gives the first report of a direct correlation of Schottky barrier characteristics to silicide growth on a-Si:H. Changes in diode ideality factor (from 1.2 to 1.05) produced by annealing can now be directly attributed to growth of Pd2Si as demonstrated by Raman spectroscopy. Unannealed samples show long-term changes in characteristics at room temperature due to slow silicide growth. However, Pd Schottky barriers possess ideal stable characteristics once silicide growth is complete.

AB - This letter gives the first report of a direct correlation of Schottky barrier characteristics to silicide growth on a-Si:H. Changes in diode ideality factor (from 1.2 to 1.05) produced by annealing can now be directly attributed to growth of Pd2Si as demonstrated by Raman spectroscopy. Unannealed samples show long-term changes in characteristics at room temperature due to slow silicide growth. However, Pd Schottky barriers possess ideal stable characteristics once silicide growth is complete.

UR - http://www.scopus.com/inward/record.url?scp=0006283119&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0006283119&partnerID=8YFLogxK

U2 - 10.1063/1.92670

DO - 10.1063/1.92670

M3 - Article

VL - 39

SP - 274

EP - 276

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 3

ER -