Abstract
This letter gives the first report of a direct correlation of Schottky barrier characteristics to silicide growth on a-Si:H. Changes in diode ideality factor (from 1.2 to 1.05) produced by annealing can now be directly attributed to growth of Pd2Si as demonstrated by Raman spectroscopy. Unannealed samples show long-term changes in characteristics at room temperature due to slow silicide growth. However, Pd Schottky barriers possess ideal stable characteristics once silicide growth is complete.
Original language | English (US) |
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Pages (from-to) | 274-276 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 39 |
Issue number | 3 |
DOIs | |
State | Published - 1981 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)