Silicide formation and stability of Ti SiGe and Co SiGe

Zhihai Wang, D. B. Aldrich, Y. L. Chen, D. E. Sayers, R. J. Nemanich

Research output: Contribution to journalArticle

43 Scopus citations

Abstract

The formation and stability of the products of Ti and Co reacting with Si1 - x Gex substrates were investigated. For the Ti SiGe system, when a C54 Ti(Si1 - yGey)2 layer forms, the Ge index y is initially the same as the Ge index of the Si1-xGex substrate (i.e. y = x). Thereafter Si1 - xGex from the substrate continues to diffuse into the C54 layer via lattice and grain-boundary diffusion. Some of the Si which diffuses into the C54 lattice replaces Ge in the lattice, and the C54 Ti(Si1 - yGey)2 becomes silicon enriched (i.e. y < x). For the Co SiGe system, it was determined that a silicon-enriched Co(Si1 - yGey) layer was formed at ~ 400 °C. As the annealing temperature was increased, the reacted layer became even more Si enriched. For both materials systems, Ge-enriched Si1 - zGe(z > x) islands were observed. It was found that for Co Si1 - xex the reacted layer consisted of CoSi2 and Si1 - zGez, after high-temperature annealing (≈700 °C). We propose that these processes are driven by a reduction in the crystal energy of the C54 Ti(Si1 - yGey)2 phase in the Ti SiGe system and the Co(Si1 - yGey) phase in the Co SiGe system which accompanies the replacement of Ge with Si.

Original languageEnglish (US)
Pages (from-to)555-560
Number of pages6
JournalThin Solid Films
Volume270
Issue number1-2
DOIs
StatePublished - Dec 1 1995
Externally publishedYes

Keywords

  • Annealing
  • Cobalt
  • Silicides
  • Titanium

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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