@inproceedings{ca25f659ff414b47be12b603027b1a3c,
title = "Significantly improved carrier lifetime and reduced interface recombination velocity for CdTe/MgCdTe double heterostructures",
abstract = "The carrier lifetime of CdTe/MgCdTe double heterostructures has been enhanced significantly up to 2.1 μs through using 30 nm Mg0.48Cd0.52Te barriers. Temperature-dependent photoluminescence measurements indicate that the radiative recombination contributes significantly to the total recombination at room temperature, and the internal quantum efficiency is estimated to be 40 %. A radiative and a non-radiative lifetimes have thus been calculated to be 5.25 μs and 3.5 μs, respectively. The interface recombination velocity of CdTe/Mg0.48Cd0.52Te is determined to be smaller than 2.7 cm/s, which is better or very close to the best values reported for GaAs/AlGaAs and GaAs/Ga0.5In0.5P double heterostructures.",
keywords = "cadmium compounds, carrier lifetime, photoluminescence, semiconductor growth, semiconductor materials, x-ray diffraction",
author = "Shi Liu and Zhao, {Xin Hao} and Campbell, {Calli M.} and Lassise, {Maxwell B.} and Yuan Zhao and Yong-Hang Zhang",
note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 ; Conference date: 14-06-2015 Through 19-06-2015",
year = "2015",
month = dec,
day = "14",
doi = "10.1109/PVSC.2015.7356225",
language = "English (US)",
series = "2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015",
}