Abstract
The carrier lifetime of CdTe/MgCdTe double heterostructures has been enhanced significantly up to 2.1 μs through using 30 nm Mg0.48Cd0.52Te barriers. Temperature-dependent photoluminescence measurements indicate that the radiative recombination contributes significantly to the total recombination at room temperature, and the internal quantum efficiency is estimated to be 40 %. A radiative and a non-radiative lifetimes have thus been calculated to be 5.25 μs and 3.5 μs, respectively. The interface recombination velocity of CdTe/Mg0.48Cd0.52Te is determined to be smaller than 2.7 cm/s, which is better or very close to the best values reported for GaAs/AlGaAs and GaAs/Ga0.5In0.5P double heterostructures.
Original language | English (US) |
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Title of host publication | 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
ISBN (Print) | 9781479979448 |
DOIs | |
State | Published - Dec 14 2015 |
Event | 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States Duration: Jun 14 2015 → Jun 19 2015 |
Other
Other | 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 |
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Country/Territory | United States |
City | New Orleans |
Period | 6/14/15 → 6/19/15 |
Keywords
- cadmium compounds
- carrier lifetime
- photoluminescence
- semiconductor growth
- semiconductor materials
- x-ray diffraction
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials