Significantly improved carrier lifetime and reduced interface recombination velocity for CdTe/MgCdTe double heterostructures

Shi Liu; Xin Hao Zhao; Calli M. Campbell; Maxwell B. Lassise; Yuan Zhao; Yong-Hang Zhang

doi:10.1109/PVSC.2015.7356225

Significantly improved carrier lifetime and reduced interface recombination velocity for CdTe/MgCdTe double heterostructures

Shi Liu, Xin Hao Zhao, Calli M. Campbell, Maxwell B. Lassise, Yuan Zhao, Yong-Hang Zhang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

The carrier lifetime of CdTe/MgCdTe double heterostructures has been enhanced significantly up to 2.1 μs through using 30 nm Mg0.48Cd0.52Te barriers. Temperature-dependent photoluminescence measurements indicate that the radiative recombination contributes significantly to the total recombination at room temperature, and the internal quantum efficiency is estimated to be 40 %. A radiative and a non-radiative lifetimes have thus been calculated to be 5.25 μs and 3.5 μs, respectively. The interface recombination velocity of CdTe/Mg0.48Cd0.52Te is determined to be smaller than 2.7 cm/s, which is better or very close to the best values reported for GaAs/AlGaAs and GaAs/Ga0.5In0.5P double heterostructures.

Original language	English (US)
Title of host publication	2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Print)	9781479979448
DOIs	https://doi.org/10.1109/PVSC.2015.7356225
State	Published - Dec 14 2015
Event	42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States Duration: Jun 14 2015 → Jun 19 2015

Other

Other	42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
Country/Territory	United States
City	New Orleans
Period	6/14/15 → 6/19/15

Keywords

cadmium compounds
carrier lifetime
photoluminescence
semiconductor growth
semiconductor materials
x-ray diffraction

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/PVSC.2015.7356225

Cite this

Liu, S., Zhao, X. H., Campbell, C. M., Lassise, M. B., Zhao, Y., & Zhang, Y-H. (2015). Significantly improved carrier lifetime and reduced interface recombination velocity for CdTe/MgCdTe double heterostructures. In 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015 [7356225] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2015.7356225

Significantly improved carrier lifetime and reduced interface recombination velocity for CdTe/MgCdTe double heterostructures. / Liu, Shi; Zhao, Xin Hao; Campbell, Calli M. et al.

2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 7356225.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Liu, S, Zhao, XH, Campbell, CM, Lassise, MB, Zhao, Y & Zhang, Y-H 2015, Significantly improved carrier lifetime and reduced interface recombination velocity for CdTe/MgCdTe double heterostructures. in 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015., 7356225, Institute of Electrical and Electronics Engineers Inc., 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015, New Orleans, United States, 6/14/15. https://doi.org/10.1109/PVSC.2015.7356225

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title = "Significantly improved carrier lifetime and reduced interface recombination velocity for CdTe/MgCdTe double heterostructures",

abstract = "The carrier lifetime of CdTe/MgCdTe double heterostructures has been enhanced significantly up to 2.1 μs through using 30 nm Mg0.48Cd0.52Te barriers. Temperature-dependent photoluminescence measurements indicate that the radiative recombination contributes significantly to the total recombination at room temperature, and the internal quantum efficiency is estimated to be 40 %. A radiative and a non-radiative lifetimes have thus been calculated to be 5.25 μs and 3.5 μs, respectively. The interface recombination velocity of CdTe/Mg0.48Cd0.52Te is determined to be smaller than 2.7 cm/s, which is better or very close to the best values reported for GaAs/AlGaAs and GaAs/Ga0.5In0.5P double heterostructures.",

keywords = "cadmium compounds, carrier lifetime, photoluminescence, semiconductor growth, semiconductor materials, x-ray diffraction",

author = "Shi Liu and Zhao, {Xin Hao} and Campbell, {Calli M.} and Lassise, {Maxwell B.} and Yuan Zhao and Yong-Hang Zhang",

year = "2015",

month = dec,

day = "14",

doi = "10.1109/PVSC.2015.7356225",

language = "English (US)",

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booktitle = "2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015",

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T1 - Significantly improved carrier lifetime and reduced interface recombination velocity for CdTe/MgCdTe double heterostructures

AU - Liu, Shi

AU - Zhao, Xin Hao

AU - Campbell, Calli M.

AU - Lassise, Maxwell B.

AU - Zhao, Yuan

AU - Zhang, Yong-Hang

PY - 2015/12/14

Y1 - 2015/12/14

N2 - The carrier lifetime of CdTe/MgCdTe double heterostructures has been enhanced significantly up to 2.1 μs through using 30 nm Mg0.48Cd0.52Te barriers. Temperature-dependent photoluminescence measurements indicate that the radiative recombination contributes significantly to the total recombination at room temperature, and the internal quantum efficiency is estimated to be 40 %. A radiative and a non-radiative lifetimes have thus been calculated to be 5.25 μs and 3.5 μs, respectively. The interface recombination velocity of CdTe/Mg0.48Cd0.52Te is determined to be smaller than 2.7 cm/s, which is better or very close to the best values reported for GaAs/AlGaAs and GaAs/Ga0.5In0.5P double heterostructures.

AB - The carrier lifetime of CdTe/MgCdTe double heterostructures has been enhanced significantly up to 2.1 μs through using 30 nm Mg0.48Cd0.52Te barriers. Temperature-dependent photoluminescence measurements indicate that the radiative recombination contributes significantly to the total recombination at room temperature, and the internal quantum efficiency is estimated to be 40 %. A radiative and a non-radiative lifetimes have thus been calculated to be 5.25 μs and 3.5 μs, respectively. The interface recombination velocity of CdTe/Mg0.48Cd0.52Te is determined to be smaller than 2.7 cm/s, which is better or very close to the best values reported for GaAs/AlGaAs and GaAs/Ga0.5In0.5P double heterostructures.

KW - cadmium compounds

KW - carrier lifetime

KW - photoluminescence

KW - semiconductor growth

KW - semiconductor materials

KW - x-ray diffraction

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U2 - 10.1109/PVSC.2015.7356225

DO - 10.1109/PVSC.2015.7356225

M3 - Conference contribution

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SN - 9781479979448

BT - 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015

Y2 - 14 June 2015 through 19 June 2015

ER -

Significantly improved carrier lifetime and reduced interface recombination velocity for CdTe/MgCdTe double heterostructures

Abstract

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