TY - GEN
T1 - SiGeSn Technology for All-Group-IV Photonics
AU - Yu, Shui Qing
AU - Salamo, Gregory
AU - Du, Wei
AU - Li, Baohua
AU - Sun, Greg
AU - Soref, Richard A.
AU - Zhang, Yong Hang
AU - Chang, Guo En
N1 - Publisher Copyright:
© 2022 IEEE.
PY - 2022
Y1 - 2022
N2 - The SiGeSn semiconductors have opened a new route for the development of all-group-IV-based optoelectronic devices [1], [2]. The unique optical properties of SiGeSn alloys include: i) a true direct bandgap material leads to the demonstration of band- to-band transition LEDs and lasers that could be monolithically integrated on Si substrates [3], [4]; ii) the refractive index and bandgap energy can be engineered independently, making the operation wavelengths of emitters and photo detectors cover the broad near- and mid-infrared range [5]; and iii) the full complementary metal-oxide-semiconductor (CMOS) compatibility allows for low-cost and high-yield foundry manufacturing [6]. This talk will present the recent progress for the development of SiGeSn technology, including the material growth using commercial chemical vapor deposition reactor, demonstration of optically pumped and electrically injected lasers, light emitting diodes (LEDs) and photodetectors.
AB - The SiGeSn semiconductors have opened a new route for the development of all-group-IV-based optoelectronic devices [1], [2]. The unique optical properties of SiGeSn alloys include: i) a true direct bandgap material leads to the demonstration of band- to-band transition LEDs and lasers that could be monolithically integrated on Si substrates [3], [4]; ii) the refractive index and bandgap energy can be engineered independently, making the operation wavelengths of emitters and photo detectors cover the broad near- and mid-infrared range [5]; and iii) the full complementary metal-oxide-semiconductor (CMOS) compatibility allows for low-cost and high-yield foundry manufacturing [6]. This talk will present the recent progress for the development of SiGeSn technology, including the material growth using commercial chemical vapor deposition reactor, demonstration of optically pumped and electrically injected lasers, light emitting diodes (LEDs) and photodetectors.
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U2 - 10.1109/DRC55272.2022.9855799
DO - 10.1109/DRC55272.2022.9855799
M3 - Conference contribution
AN - SCOPUS:85137688161
T3 - Device Research Conference - Conference Digest, DRC
BT - 2022 Device Research Conference, DRC 2022
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2022 Device Research Conference, DRC 2022
Y2 - 26 June 2022 through 29 June 2022
ER -