SiGeSn Technology for All-Group-IV Photonics

Shui Qing Yu, Gregory Salamo, Wei Du, Baohua Li, Greg Sun, Richard A. Soref, Yong Hang Zhang, Guo En Chang

Research output: Chapter in Book/Report/Conference proceedingConference contribution


The SiGeSn semiconductors have opened a new route for the development of all-group-IV-based optoelectronic devices [1], [2]. The unique optical properties of SiGeSn alloys include: i) a true direct bandgap material leads to the demonstration of band- to-band transition LEDs and lasers that could be monolithically integrated on Si substrates [3], [4]; ii) the refractive index and bandgap energy can be engineered independently, making the operation wavelengths of emitters and photo detectors cover the broad near- and mid-infrared range [5]; and iii) the full complementary metal-oxide-semiconductor (CMOS) compatibility allows for low-cost and high-yield foundry manufacturing [6]. This talk will present the recent progress for the development of SiGeSn technology, including the material growth using commercial chemical vapor deposition reactor, demonstration of optically pumped and electrically injected lasers, light emitting diodes (LEDs) and photodetectors.

Original languageEnglish (US)
Title of host publication2022 Device Research Conference, DRC 2022
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781665498838
StatePublished - 2022
Event2022 Device Research Conference, DRC 2022 - Columbus, United States
Duration: Jun 26 2022Jun 29 2022

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770


Conference2022 Device Research Conference, DRC 2022
Country/TerritoryUnited States

ASJC Scopus subject areas

  • Electrical and Electronic Engineering


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