SiGe nanostructures

L. Vescan, Michael Goryll, K. Grimm, C. Dieker, T. Stoica

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

There is increasing interest in Si-based optoelectronics using Si1-xGex nanostructures due to the possibility of their integration with the Si technology. To overcome the problem of the indirect character of SiGe one is looking for means to increase the transition probability by realizing structures involving quantum size effects. Several fabrication strategies for semiconductor nanostructures have been proposed. One possible approach involves selective epitaxy to fill-in the small holes in patterned substrates. To realize the lateral confinement below 100 nm the patterned substrates are made either by e-beam lithography or by optical lithography. In the latter case, the sub-100 nm confinement is realized by the development of facets. Another approach for nanostructures is based on self-organized growth which leads to island formation in highly lattice-mismatched layers. In this paper these items are discussed for SiGe as well as device applications such as light emitting diodes. The growth technique used was low pressure chemical vapor deposition.

Original languageEnglish (US)
Title of host publication1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998
EditorsSammy Kayali
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages38-46
Number of pages9
Volume1998-September
ISBN (Electronic)0780352882, 9780780352889
DOIs
StatePublished - Jan 1 1998
Externally publishedYes
Event1st Topical Meeting on Silicon Mono1ithic Integrated Circuits in RF Systems, SiRF 1998 - Ann Arbor, United States
Duration: Sep 18 1998Sep 18 1998

Other

Other1st Topical Meeting on Silicon Mono1ithic Integrated Circuits in RF Systems, SiRF 1998
CountryUnited States
CityAnn Arbor
Period9/18/989/18/98

Fingerprint

Nanostructures
lithography
transition probabilities
epitaxy
flat surfaces
Low pressure chemical vapor deposition
light emitting diodes
low pressure
vapor deposition
Photolithography
Substrates
Epitaxial growth
Optoelectronic devices
Lithography
fabrication
Light emitting diodes
Semiconductor materials
Fabrication

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Instrumentation

Cite this

Vescan, L., Goryll, M., Grimm, K., Dieker, C., & Stoica, T. (1998). SiGe nanostructures. In S. Kayali (Ed.), 1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998 (Vol. 1998-September, pp. 38-46). [750173] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SMIC.1998.750173

SiGe nanostructures. / Vescan, L.; Goryll, Michael; Grimm, K.; Dieker, C.; Stoica, T.

1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998. ed. / Sammy Kayali. Vol. 1998-September Institute of Electrical and Electronics Engineers Inc., 1998. p. 38-46 750173.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Vescan, L, Goryll, M, Grimm, K, Dieker, C & Stoica, T 1998, SiGe nanostructures. in S Kayali (ed.), 1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998. vol. 1998-September, 750173, Institute of Electrical and Electronics Engineers Inc., pp. 38-46, 1st Topical Meeting on Silicon Mono1ithic Integrated Circuits in RF Systems, SiRF 1998, Ann Arbor, United States, 9/18/98. https://doi.org/10.1109/SMIC.1998.750173
Vescan L, Goryll M, Grimm K, Dieker C, Stoica T. SiGe nanostructures. In Kayali S, editor, 1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998. Vol. 1998-September. Institute of Electrical and Electronics Engineers Inc. 1998. p. 38-46. 750173 https://doi.org/10.1109/SMIC.1998.750173
Vescan, L. ; Goryll, Michael ; Grimm, K. ; Dieker, C. ; Stoica, T. / SiGe nanostructures. 1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998. editor / Sammy Kayali. Vol. 1998-September Institute of Electrical and Electronics Engineers Inc., 1998. pp. 38-46
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