Side gating in δ-doped quantum wires

Y. Feng, Trevor Thornton, J. J. Harris, D. Williams

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

We have used a side gating technique to vary the width of narrow wires made from δ-doped GaAs. The wires show pronounced quantum interference effects which can be used to determine the wire width and electron phase coherence length as a function of gate voltage. At zero gate bias the depletion from the etched surfaces is very small because of the high electron density and the electrical width of the wires is therefore only slightly smaller than the physical width.

Original languageEnglish (US)
Pages (from-to)94-96
Number of pages3
JournalApplied Physics Letters
Volume60
Issue number1
DOIs
StatePublished - 1992
Externally publishedYes

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quantum wires
wire
phase coherence
depletion
interference
electric potential
electrons

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Side gating in δ-doped quantum wires. / Feng, Y.; Thornton, Trevor; Harris, J. J.; Williams, D.

In: Applied Physics Letters, Vol. 60, No. 1, 1992, p. 94-96.

Research output: Contribution to journalArticle

Feng, Y, Thornton, T, Harris, JJ & Williams, D 1992, 'Side gating in δ-doped quantum wires', Applied Physics Letters, vol. 60, no. 1, pp. 94-96. https://doi.org/10.1063/1.107386
Feng, Y. ; Thornton, Trevor ; Harris, J. J. ; Williams, D. / Side gating in δ-doped quantum wires. In: Applied Physics Letters. 1992 ; Vol. 60, No. 1. pp. 94-96.
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