Side gating in δ-doped quantum wires

Y. Feng; T. J. Thornton; J. J. Harris; D. Williams

doi:10.1063/1.107386

Side gating in δ-doped quantum wires

Y. Feng, T. J. Thornton, J. J. Harris, D. Williams

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

We have used a side gating technique to vary the width of narrow wires made from δ-doped GaAs. The wires show pronounced quantum interference effects which can be used to determine the wire width and electron phase coherence length as a function of gate voltage. At zero gate bias the depletion from the etched surfaces is very small because of the high electron density and the electrical width of the wires is therefore only slightly smaller than the physical width.

Original language	English (US)
Pages (from-to)	94-96
Number of pages	3
Journal	Applied Physics Letters
Volume	60
Issue number	1
DOIs	https://doi.org/10.1063/1.107386
State	Published - 1992
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.107386

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title = "Side gating in δ-doped quantum wires",

abstract = "We have used a side gating technique to vary the width of narrow wires made from δ-doped GaAs. The wires show pronounced quantum interference effects which can be used to determine the wire width and electron phase coherence length as a function of gate voltage. At zero gate bias the depletion from the etched surfaces is very small because of the high electron density and the electrical width of the wires is therefore only slightly smaller than the physical width.",

author = "Y. Feng and Thornton, {T. J.} and Harris, {J. J.} and D. Williams",

year = "1992",

doi = "10.1063/1.107386",

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volume = "60",

pages = "94--96",

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T1 - Side gating in δ-doped quantum wires

AU - Feng, Y.

AU - Thornton, T. J.

AU - Harris, J. J.

AU - Williams, D.

PY - 1992

Y1 - 1992

N2 - We have used a side gating technique to vary the width of narrow wires made from δ-doped GaAs. The wires show pronounced quantum interference effects which can be used to determine the wire width and electron phase coherence length as a function of gate voltage. At zero gate bias the depletion from the etched surfaces is very small because of the high electron density and the electrical width of the wires is therefore only slightly smaller than the physical width.

AB - We have used a side gating technique to vary the width of narrow wires made from δ-doped GaAs. The wires show pronounced quantum interference effects which can be used to determine the wire width and electron phase coherence length as a function of gate voltage. At zero gate bias the depletion from the etched surfaces is very small because of the high electron density and the electrical width of the wires is therefore only slightly smaller than the physical width.

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U2 - 10.1063/1.107386

DO - 10.1063/1.107386

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Side gating in δ-doped quantum wires

Abstract

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