Side gating for δ-doped quantum wires

T. J. Thornton, Y. Feng, J. J. Harris, D. Williams

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have used side gating to change the width of narrow wires made from δ-doped GaAs. The high electron density in the δ-layer ensures that the depletion from the etched surfaces is negligible permitting a high degree of control of the channel width.

Original languageEnglish (US)
Title of host publicationInstitute of Physics Conference Series
PublisherPubl by Institute of Physics Publishing Ltd
Pages111-114
Number of pages4
ISBN (Print)0750302259
StatePublished - Dec 1 1992
EventProceedings of the International Workshop on Quantum Effect Physics, Electronics and Applications - Luxor, Egypt
Duration: Jan 6 1992Jan 10 1992

Publication series

NameInstitute of Physics Conference Series
Volume127
ISSN (Print)0951-3248

Other

OtherProceedings of the International Workshop on Quantum Effect Physics, Electronics and Applications
CityLuxor, Egypt
Period1/6/921/10/92

    Fingerprint

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Thornton, T. J., Feng, Y., Harris, J. J., & Williams, D. (1992). Side gating for δ-doped quantum wires. In Institute of Physics Conference Series (pp. 111-114). (Institute of Physics Conference Series; Vol. 127). Publ by Institute of Physics Publishing Ltd.