@inproceedings{4eafc15591c94a5aa351992644bfcb72,
title = "Side gating for δ-doped quantum wires",
abstract = "We have used side gating to change the width of narrow wires made from δ-doped GaAs. The high electron density in the δ-layer ensures that the depletion from the etched surfaces is negligible permitting a high degree of control of the channel width.",
author = "Thornton, {T. J.} and Y. Feng and Harris, {J. J.} and D. Williams",
year = "1992",
month = dec,
day = "1",
language = "English (US)",
isbn = "0750302259",
series = "Institute of Physics Conference Series",
publisher = "Publ by Institute of Physics Publishing Ltd",
pages = "111--114",
booktitle = "Institute of Physics Conference Series",
note = "Proceedings of the International Workshop on Quantum Effect Physics, Electronics and Applications ; Conference date: 06-01-1992 Through 10-01-1992",
}