Si-MESFET technologies for low drop out regulators

Steve Wood, William Lepkowski, Seth Wilk, Trevor Thornton

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

Power conditioning circuits based on high breakdown voltage silicon MESFETs are being developed as an alternative to existing approaches that use CMOS or bipolar transistors. Results are presented from simulations of a low drop out (LDO) regulator as an example of the Si-MESFET technology. The LDO regulator exploits the depletion mode behavior of an n-channel MESFET to achieve low drop out voltages with impressive power supply rejection. The high voltage compliance of the Si-MESFETs (5-50V) make them ideally suited for a wide range of commercial and defense related LDO regulator applications.

Original languageEnglish (US)
Title of host publicationINTELEC 2008
Subtitle of host publication30th Annual International Telecommunications Energy Conference
DOIs
StatePublished - Dec 30 2008
Event30th Annual International Telecommunications Energy Conference, INTELEC 2008 - San Diego, CA, United States
Duration: Sep 14 2008Sep 18 2008

Publication series

NameINTELEC, International Telecommunications Energy Conference (Proceedings)
ISSN (Print)0275-0473

Other

Other30th Annual International Telecommunications Energy Conference, INTELEC 2008
CountryUnited States
CitySan Diego, CA
Period9/14/089/18/08

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ASJC Scopus subject areas

  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

Cite this

Wood, S., Lepkowski, W., Wilk, S., & Thornton, T. (2008). Si-MESFET technologies for low drop out regulators. In INTELEC 2008: 30th Annual International Telecommunications Energy Conference [4664094] (INTELEC, International Telecommunications Energy Conference (Proceedings)). https://doi.org/10.1109/INTLEC.2008.4664094