Si-MESFET technologies for low drop out regulators

Steve Wood; William Lepkowski; Seth Wilk; Trevor Thornton

doi:10.1109/INTLEC.2008.4664094

Si-MESFET technologies for low drop out regulators

Steve Wood, William Lepkowski, Seth Wilk, Trevor Thornton

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Scopus citations

Abstract

Power conditioning circuits based on high breakdown voltage silicon MESFETs are being developed as an alternative to existing approaches that use CMOS or bipolar transistors. Results are presented from simulations of a low drop out (LDO) regulator as an example of the Si-MESFET technology. The LDO regulator exploits the depletion mode behavior of an n-channel MESFET to achieve low drop out voltages with impressive power supply rejection. The high voltage compliance of the Si-MESFETs (5-50V) make them ideally suited for a wide range of commercial and defense related LDO regulator applications.

Original language	English (US)
Title of host publication	INTELEC 2008
Subtitle of host publication	30th Annual International Telecommunications Energy Conference
DOIs	https://doi.org/10.1109/INTLEC.2008.4664094
State	Published - Dec 30 2008
Externally published	Yes
Event	30th Annual International Telecommunications Energy Conference, INTELEC 2008 - San Diego, CA, United States Duration: Sep 14 2008 → Sep 18 2008

Publication series

Name	INTELEC, International Telecommunications Energy Conference (Proceedings)
ISSN (Print)	0275-0473

Other

Other	30th Annual International Telecommunications Energy Conference, INTELEC 2008
Country/Territory	United States
City	San Diego, CA
Period	9/14/08 → 9/18/08

ASJC Scopus subject areas

Energy Engineering and Power Technology
Electrical and Electronic Engineering

Access to Document

10.1109/INTLEC.2008.4664094

Cite this

Wood, S, Lepkowski, W, Wilk, S & Thornton, T 2008, Si-MESFET technologies for low drop out regulators. in INTELEC 2008: 30th Annual International Telecommunications Energy Conference., 4664094, INTELEC, International Telecommunications Energy Conference (Proceedings), 30th Annual International Telecommunications Energy Conference, INTELEC 2008, San Diego, CA, United States, 9/14/08. https://doi.org/10.1109/INTLEC.2008.4664094

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abstract = "Power conditioning circuits based on high breakdown voltage silicon MESFETs are being developed as an alternative to existing approaches that use CMOS or bipolar transistors. Results are presented from simulations of a low drop out (LDO) regulator as an example of the Si-MESFET technology. The LDO regulator exploits the depletion mode behavior of an n-channel MESFET to achieve low drop out voltages with impressive power supply rejection. The high voltage compliance of the Si-MESFETs (5-50V) make them ideally suited for a wide range of commercial and defense related LDO regulator applications.",

author = "Steve Wood and William Lepkowski and Seth Wilk and Trevor Thornton",

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doi = "10.1109/INTLEC.2008.4664094",

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AU - Wilk, Seth

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N2 - Power conditioning circuits based on high breakdown voltage silicon MESFETs are being developed as an alternative to existing approaches that use CMOS or bipolar transistors. Results are presented from simulations of a low drop out (LDO) regulator as an example of the Si-MESFET technology. The LDO regulator exploits the depletion mode behavior of an n-channel MESFET to achieve low drop out voltages with impressive power supply rejection. The high voltage compliance of the Si-MESFETs (5-50V) make them ideally suited for a wide range of commercial and defense related LDO regulator applications.

AB - Power conditioning circuits based on high breakdown voltage silicon MESFETs are being developed as an alternative to existing approaches that use CMOS or bipolar transistors. Results are presented from simulations of a low drop out (LDO) regulator as an example of the Si-MESFET technology. The LDO regulator exploits the depletion mode behavior of an n-channel MESFET to achieve low drop out voltages with impressive power supply rejection. The high voltage compliance of the Si-MESFETs (5-50V) make them ideally suited for a wide range of commercial and defense related LDO regulator applications.

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ER -

Si-MESFET technologies for low drop out regulators

Abstract

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