Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications

Huong Tran; Thach Pham; Joe Margetis; Yiyin Zhou; Wei Dou; Perry C. Grant; Joshua M. Grant; Sattar Al-Kabi; Greg Sun; Richard A. Soref; John Tolle; Yong Hang Zhang; Wei Du; Baohua Li; Mansour Mortazavi; Shui Qing Yu

doi:10.1021/acsphotonics.9b00845

Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications

Huong Tran, Thach Pham, Joe Margetis, Yiyin Zhou, Wei Dou, Perry C. Grant, Joshua M. Grant, Sattar Al-Kabi, Greg Sun, Richard A. Soref, John Tolle, Yong Hang Zhang, Wei Du, Baohua Li, Mansour Mortazavi, Shui Qing Yu

Research output: Contribution to journal › Article › peer-review

130 Scopus citations

Abstract

The GeSn detector offers high-performance Si-based infrared photodetectors with complementary metal-oxide-semiconductor (CMOS) technique compatibility. In this work, we report a comprehensive study of Si-based GeSn mid-infrared photodetectors, which includes the demonstration of a set of photoconductors with Sn compositions ranging from 10.5% to 22.3%, showing the cutoff wavelength has been extended to 3.65 μm. The maximum D∗ of 1.1 × 10¹⁰ cm·Hz^1/2·W^-1 measured at 77 K is comparable to that of commercial extended-InGaAs detectors. We also report the development of a surface passivation technique on photodiodes based on an in-depth analysis of a dark current mechanism, effectively reducing the dark current. Moreover, mid-infrared images were obtained using GeSn photodetectors, showing the comparable image quality with that acquired by using commercial PbSe detectors. This work is a major step toward Si-based mid-infrared photodetectors for imaging applications.

Original language	English (US)
Pages (from-to)	2807-2815
Number of pages	9
Journal	ACS Photonics
Volume	6
Issue number	11
DOIs	https://doi.org/10.1021/acsphotonics.9b00845
State	Published - Nov 20 2019

Keywords

GeSn photodetector
high Sn composition
imaging
mid-infrared
surface passivation

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Biotechnology
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1021/acsphotonics.9b00845

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title = "Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications",

abstract = "The GeSn detector offers high-performance Si-based infrared photodetectors with complementary metal-oxide-semiconductor (CMOS) technique compatibility. In this work, we report a comprehensive study of Si-based GeSn mid-infrared photodetectors, which includes the demonstration of a set of photoconductors with Sn compositions ranging from 10.5% to 22.3%, showing the cutoff wavelength has been extended to 3.65 μm. The maximum D∗ of 1.1 × 1010 cm·Hz1/2·W-1 measured at 77 K is comparable to that of commercial extended-InGaAs detectors. We also report the development of a surface passivation technique on photodiodes based on an in-depth analysis of a dark current mechanism, effectively reducing the dark current. Moreover, mid-infrared images were obtained using GeSn photodetectors, showing the comparable image quality with that acquired by using commercial PbSe detectors. This work is a major step toward Si-based mid-infrared photodetectors for imaging applications.",

keywords = "GeSn photodetector, high Sn composition, imaging, mid-infrared, surface passivation",

author = "Huong Tran and Thach Pham and Joe Margetis and Yiyin Zhou and Wei Dou and Grant, {Perry C.} and Grant, {Joshua M.} and Sattar Al-Kabi and Greg Sun and Soref, {Richard A.} and John Tolle and Zhang, {Yong Hang} and Wei Du and Baohua Li and Mansour Mortazavi and Yu, {Shui Qing}",

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doi = "10.1021/acsphotonics.9b00845",

language = "English (US)",

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T1 - Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications

AU - Tran, Huong

AU - Pham, Thach

AU - Margetis, Joe

AU - Zhou, Yiyin

AU - Dou, Wei

AU - Grant, Perry C.

AU - Grant, Joshua M.

AU - Al-Kabi, Sattar

AU - Sun, Greg

AU - Soref, Richard A.

AU - Tolle, John

AU - Zhang, Yong Hang

AU - Du, Wei

AU - Li, Baohua

AU - Mortazavi, Mansour

AU - Yu, Shui Qing

PY - 2019/11/20

Y1 - 2019/11/20

N2 - The GeSn detector offers high-performance Si-based infrared photodetectors with complementary metal-oxide-semiconductor (CMOS) technique compatibility. In this work, we report a comprehensive study of Si-based GeSn mid-infrared photodetectors, which includes the demonstration of a set of photoconductors with Sn compositions ranging from 10.5% to 22.3%, showing the cutoff wavelength has been extended to 3.65 μm. The maximum D∗ of 1.1 × 1010 cm·Hz1/2·W-1 measured at 77 K is comparable to that of commercial extended-InGaAs detectors. We also report the development of a surface passivation technique on photodiodes based on an in-depth analysis of a dark current mechanism, effectively reducing the dark current. Moreover, mid-infrared images were obtained using GeSn photodetectors, showing the comparable image quality with that acquired by using commercial PbSe detectors. This work is a major step toward Si-based mid-infrared photodetectors for imaging applications.

AB - The GeSn detector offers high-performance Si-based infrared photodetectors with complementary metal-oxide-semiconductor (CMOS) technique compatibility. In this work, we report a comprehensive study of Si-based GeSn mid-infrared photodetectors, which includes the demonstration of a set of photoconductors with Sn compositions ranging from 10.5% to 22.3%, showing the cutoff wavelength has been extended to 3.65 μm. The maximum D∗ of 1.1 × 1010 cm·Hz1/2·W-1 measured at 77 K is comparable to that of commercial extended-InGaAs detectors. We also report the development of a surface passivation technique on photodiodes based on an in-depth analysis of a dark current mechanism, effectively reducing the dark current. Moreover, mid-infrared images were obtained using GeSn photodetectors, showing the comparable image quality with that acquired by using commercial PbSe detectors. This work is a major step toward Si-based mid-infrared photodetectors for imaging applications.

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KW - mid-infrared

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Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications

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