Shunt effect in polycrystalline GaAs solar cells

Christiana Honsberg, Allen M. Bernett

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

Thin-film polycrystalline GaAs solar cells have the potential for reduced cost while retaining high efficiency. However, solar cells made from polycrystalline GaAs have historically had poor open-circuit voltages. Models that account for these low voltages suggest that in order to make solar cells with high voltages it is necessary to use material with very large grains. As an alternative cause for the low voltages, the presence of Schottky barriers due to inverted grain boundaries is proposed. If this is the case, the requirements on grain size will be reduced. The existence of grain boundary inversion in polycrystalline solar cells is demonstrated, and it is shown that contacting grain boundaries leads to lower voltages.

Original languageEnglish (US)
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
PublisherPubl by IEEE
Pages772-776
Number of pages5
Volume1
StatePublished - May 1990
Externally publishedYes
EventTwenty First IEEE Photovoltaic Specialists Conference - 1990 Part 2 (of 2) - Kissimimee, FL, USA
Duration: May 21 1990May 25 1990

Other

OtherTwenty First IEEE Photovoltaic Specialists Conference - 1990 Part 2 (of 2)
CityKissimimee, FL, USA
Period5/21/905/25/90

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Condensed Matter Physics

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  • Cite this

    Honsberg, C., & Bernett, A. M. (1990). Shunt effect in polycrystalline GaAs solar cells. In Conference Record of the IEEE Photovoltaic Specialists Conference (Vol. 1, pp. 772-776). Publ by IEEE.