Shortwave limit of infrared intersubband quantum cascade lasers

C. Z. Guo; S. L. Chen; Y. H. Zhang

Shortwave limit of infrared intersubband quantum cascade lasers

C. Z. Guo, S. L. Chen, Y. H. Zhang

Research output: Contribution to journal › Article › peer-review

Abstract

The feasibility and fundamental difficulty in developing the infrared intersubband quantum cascade lasers in shorter wavelength range were discussed theoretically. The band offsets of InAs/AlSb on GaSb substrate, InAs/Al_0.6Ga_0.4Sb on GaSb substrate, and In_0.53Ga_0.47As/In_0.52Al_0.48As on InP substrate, and the confined states of their quantum wells with and without an applied electric field were analyzed and calculated by using the fundamental assumption of model-solid theory, strained band structure theory, empirical-two-band model for non-parabolic band, and methods of propagation matrix and laminar approach. It was found that the greatest energy difference between subband edges can not exceed 56-62% of the conduction band offset, and will be decreased further by the indirect valley. A designed structure of intersubband quantum cascade laser consisting of 250 coupled quantum wells in 25 periods under electric field 100 kV/cm for emitting the shortest wavelength 2.88 μm was proposed.

Original language	English (US)
Pages (from-to)	1-6
Number of pages	6
Journal	Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves
Volume	20
Issue number	1
State	Published - Feb 2001
Externally published	Yes

Keywords

Band offset
Intersubband transition
Nonparabolic band
Quantum cascade laser

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

Cite this

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title = "Shortwave limit of infrared intersubband quantum cascade lasers",

abstract = "The feasibility and fundamental difficulty in developing the infrared intersubband quantum cascade lasers in shorter wavelength range were discussed theoretically. The band offsets of InAs/AlSb on GaSb substrate, InAs/Al0.6Ga0.4Sb on GaSb substrate, and In0.53Ga0.47As/In0.52Al0.48As on InP substrate, and the confined states of their quantum wells with and without an applied electric field were analyzed and calculated by using the fundamental assumption of model-solid theory, strained band structure theory, empirical-two-band model for non-parabolic band, and methods of propagation matrix and laminar approach. It was found that the greatest energy difference between subband edges can not exceed 56-62% of the conduction band offset, and will be decreased further by the indirect valley. A designed structure of intersubband quantum cascade laser consisting of 250 coupled quantum wells in 25 periods under electric field 100 kV/cm for emitting the shortest wavelength 2.88 μm was proposed.",

keywords = "Band offset, Intersubband transition, Nonparabolic band, Quantum cascade laser",

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T1 - Shortwave limit of infrared intersubband quantum cascade lasers

AU - Guo, C. Z.

AU - Chen, S. L.

AU - Zhang, Y. H.

PY - 2001/2

Y1 - 2001/2

N2 - The feasibility and fundamental difficulty in developing the infrared intersubband quantum cascade lasers in shorter wavelength range were discussed theoretically. The band offsets of InAs/AlSb on GaSb substrate, InAs/Al0.6Ga0.4Sb on GaSb substrate, and In0.53Ga0.47As/In0.52Al0.48As on InP substrate, and the confined states of their quantum wells with and without an applied electric field were analyzed and calculated by using the fundamental assumption of model-solid theory, strained band structure theory, empirical-two-band model for non-parabolic band, and methods of propagation matrix and laminar approach. It was found that the greatest energy difference between subband edges can not exceed 56-62% of the conduction band offset, and will be decreased further by the indirect valley. A designed structure of intersubband quantum cascade laser consisting of 250 coupled quantum wells in 25 periods under electric field 100 kV/cm for emitting the shortest wavelength 2.88 μm was proposed.

AB - The feasibility and fundamental difficulty in developing the infrared intersubband quantum cascade lasers in shorter wavelength range were discussed theoretically. The band offsets of InAs/AlSb on GaSb substrate, InAs/Al0.6Ga0.4Sb on GaSb substrate, and In0.53Ga0.47As/In0.52Al0.48As on InP substrate, and the confined states of their quantum wells with and without an applied electric field were analyzed and calculated by using the fundamental assumption of model-solid theory, strained band structure theory, empirical-two-band model for non-parabolic band, and methods of propagation matrix and laminar approach. It was found that the greatest energy difference between subband edges can not exceed 56-62% of the conduction band offset, and will be decreased further by the indirect valley. A designed structure of intersubband quantum cascade laser consisting of 250 coupled quantum wells in 25 periods under electric field 100 kV/cm for emitting the shortest wavelength 2.88 μm was proposed.

KW - Band offset

KW - Intersubband transition

KW - Nonparabolic band

KW - Quantum cascade laser

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IS - 1

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Shortwave limit of infrared intersubband quantum cascade lasers

Abstract

Keywords

ASJC Scopus subject areas

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