Short-wavelength intersubband light emission from optically pumped GaN/AlN quantum wells

Roberto Paiella; Kristina Driscoll; Yitao Liao; Anirban Bhattacharyya; Lin Zhou; David Smith; Theodore D. Moustakas

Short-wavelength intersubband light emission from optically pumped GaN/AlN quantum wells

Roberto Paiella, Kristina Driscoll, Yitao Liao, Anirban Bhattacharyya, Lin Zhou, David Smith, Theodore D. Moustakas

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Due to their large conduction-band offsets, GaN/Al(Ga)N quantum wells are currently the subject of extensive research efforts aimed at extending the spectral range of intersubband optoelectronic devices towards shorter and shorter wavelengths. Here we report our recent measurement of optically pumped intersubband light emission from GaN/AlN quantum wells at the record short wavelength of about 2 μm. Nanosecond-scale optical pulses are used to resonantly pump electrons from the ground states to the second excited subbands, followed by radiative relaxation into the first excited subbands. The intersubband origin of the measured photoluminescence is confirmed via an extensive study of its polarization properties and pump wavelength dependence.

Original language	English (US)
Title of host publication	III-Nitride Materials for Sensing, Energy Conversion and Controlled Light-Matter Interactions
Pages	151-155
Number of pages	5
State	Published - Jul 7 2010
Event	2009 MRS Fall Meeting - Boston, MA, United States Duration: Nov 30 2009 → Dec 2 2009

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	1202
ISSN (Print)	0272-9172

Other

Other	2009 MRS Fall Meeting
Country/Territory	United States
City	Boston, MA
Period	11/30/09 → 12/2/09

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

Short-wavelength intersubband light emission from optically pumped GaN/AlN quantum wells. / Paiella, Roberto; Driscoll, Kristina; Liao, Yitao et al.

III-Nitride Materials for Sensing, Energy Conversion and Controlled Light-Matter Interactions. 2010. p. 151-155 (Materials Research Society Symposium Proceedings; Vol. 1202).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Paiella, R, Driscoll, K, Liao, Y, Bhattacharyya, A, Zhou, L, Smith, D & Moustakas, TD 2010, Short-wavelength intersubband light emission from optically pumped GaN/AlN quantum wells. in III-Nitride Materials for Sensing, Energy Conversion and Controlled Light-Matter Interactions. Materials Research Society Symposium Proceedings, vol. 1202, pp. 151-155, 2009 MRS Fall Meeting, Boston, MA, United States, 11/30/09.

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abstract = "Due to their large conduction-band offsets, GaN/Al(Ga)N quantum wells are currently the subject of extensive research efforts aimed at extending the spectral range of intersubband optoelectronic devices towards shorter and shorter wavelengths. Here we report our recent measurement of optically pumped intersubband light emission from GaN/AlN quantum wells at the record short wavelength of about 2 μm. Nanosecond-scale optical pulses are used to resonantly pump electrons from the ground states to the second excited subbands, followed by radiative relaxation into the first excited subbands. The intersubband origin of the measured photoluminescence is confirmed via an extensive study of its polarization properties and pump wavelength dependence.",

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T1 - Short-wavelength intersubband light emission from optically pumped GaN/AlN quantum wells

AU - Paiella, Roberto

AU - Driscoll, Kristina

AU - Liao, Yitao

AU - Bhattacharyya, Anirban

AU - Zhou, Lin

AU - Smith, David

AU - Moustakas, Theodore D.

PY - 2010/7/7

Y1 - 2010/7/7

N2 - Due to their large conduction-band offsets, GaN/Al(Ga)N quantum wells are currently the subject of extensive research efforts aimed at extending the spectral range of intersubband optoelectronic devices towards shorter and shorter wavelengths. Here we report our recent measurement of optically pumped intersubband light emission from GaN/AlN quantum wells at the record short wavelength of about 2 μm. Nanosecond-scale optical pulses are used to resonantly pump electrons from the ground states to the second excited subbands, followed by radiative relaxation into the first excited subbands. The intersubband origin of the measured photoluminescence is confirmed via an extensive study of its polarization properties and pump wavelength dependence.

AB - Due to their large conduction-band offsets, GaN/Al(Ga)N quantum wells are currently the subject of extensive research efforts aimed at extending the spectral range of intersubband optoelectronic devices towards shorter and shorter wavelengths. Here we report our recent measurement of optically pumped intersubband light emission from GaN/AlN quantum wells at the record short wavelength of about 2 μm. Nanosecond-scale optical pulses are used to resonantly pump electrons from the ground states to the second excited subbands, followed by radiative relaxation into the first excited subbands. The intersubband origin of the measured photoluminescence is confirmed via an extensive study of its polarization properties and pump wavelength dependence.

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M3 - Conference contribution

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T3 - Materials Research Society Symposium Proceedings

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BT - III-Nitride Materials for Sensing, Energy Conversion and Controlled Light-Matter Interactions

T2 - 2009 MRS Fall Meeting

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ER -

Short-wavelength intersubband light emission from optically pumped GaN/AlN quantum wells

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