Short-range potential scattering and its effect on graphene mobility

D. K. Ferry

Research output: Contribution to journalArticle

19 Scopus citations

Abstract

Over the past few years, the amazing properties of graphene have led to predictions for its use in a variety of areas, not the least of which is in semiconductor devices. However, it appears that graphene is dominated by short-range potential scattering which can arise from intrinsic defects which limit the mobility to relatively low values, well below those predicted based upon its intrinsic band structure. Here, we examine the mobility in graphene on BN, SiC, and SiO2 when it is dominated by these defects.

Original languageEnglish (US)
Pages (from-to)76-84
Number of pages9
JournalJournal of Computational Electronics
Volume12
Issue number2
DOIs
StatePublished - Jun 1 2013

Keywords

  • Dislocations
  • Graphene
  • Mobility
  • Point defects

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Modeling and Simulation
  • Electrical and Electronic Engineering

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