Short-range potential scattering and its effect on graphene mobility

D. K. Ferry

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

Over the past few years, the amazing properties of graphene have led to predictions for its use in a variety of areas, not the least of which is in semiconductor devices. However, it appears that graphene is dominated by short-range potential scattering which can arise from intrinsic defects which limit the mobility to relatively low values, well below those predicted based upon its intrinsic band structure. Here, we examine the mobility in graphene on BN, SiC, and SiO2 when it is dominated by these defects.

Original languageEnglish (US)
Pages (from-to)76-84
Number of pages9
JournalJournal of Computational Electronics
Volume12
Issue number2
DOIs
StatePublished - Jun 2013

Fingerprint

Graphite
Graphene
graphene
Scattering
Defects
scattering
Range of data
Semiconductor Devices
Band Structure
defects
SiO2
Semiconductor devices
semiconductor devices
Band structure
Prediction
predictions

Keywords

  • Dislocations
  • Graphene
  • Mobility
  • Point defects

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials
  • Modeling and Simulation

Cite this

Short-range potential scattering and its effect on graphene mobility. / Ferry, D. K.

In: Journal of Computational Electronics, Vol. 12, No. 2, 06.2013, p. 76-84.

Research output: Contribution to journalArticle

@article{e3b916366cde4141a2f3762ca743c92a,
title = "Short-range potential scattering and its effect on graphene mobility",
abstract = "Over the past few years, the amazing properties of graphene have led to predictions for its use in a variety of areas, not the least of which is in semiconductor devices. However, it appears that graphene is dominated by short-range potential scattering which can arise from intrinsic defects which limit the mobility to relatively low values, well below those predicted based upon its intrinsic band structure. Here, we examine the mobility in graphene on BN, SiC, and SiO2 when it is dominated by these defects.",
keywords = "Dislocations, Graphene, Mobility, Point defects",
author = "Ferry, {D. K.}",
year = "2013",
month = "6",
doi = "10.1007/s10825-012-0431-x",
language = "English (US)",
volume = "12",
pages = "76--84",
journal = "Journal of Computational Electronics",
issn = "1569-8025",
publisher = "Springer Netherlands",
number = "2",

}

TY - JOUR

T1 - Short-range potential scattering and its effect on graphene mobility

AU - Ferry, D. K.

PY - 2013/6

Y1 - 2013/6

N2 - Over the past few years, the amazing properties of graphene have led to predictions for its use in a variety of areas, not the least of which is in semiconductor devices. However, it appears that graphene is dominated by short-range potential scattering which can arise from intrinsic defects which limit the mobility to relatively low values, well below those predicted based upon its intrinsic band structure. Here, we examine the mobility in graphene on BN, SiC, and SiO2 when it is dominated by these defects.

AB - Over the past few years, the amazing properties of graphene have led to predictions for its use in a variety of areas, not the least of which is in semiconductor devices. However, it appears that graphene is dominated by short-range potential scattering which can arise from intrinsic defects which limit the mobility to relatively low values, well below those predicted based upon its intrinsic band structure. Here, we examine the mobility in graphene on BN, SiC, and SiO2 when it is dominated by these defects.

KW - Dislocations

KW - Graphene

KW - Mobility

KW - Point defects

UR - http://www.scopus.com/inward/record.url?scp=84879013997&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84879013997&partnerID=8YFLogxK

U2 - 10.1007/s10825-012-0431-x

DO - 10.1007/s10825-012-0431-x

M3 - Article

AN - SCOPUS:84879013997

VL - 12

SP - 76

EP - 84

JO - Journal of Computational Electronics

JF - Journal of Computational Electronics

SN - 1569-8025

IS - 2

ER -