Short-range potential scattering and its effect on graphene mobility

D. K. Ferry

doi:10.1007/s10825-012-0431-x

Short-range potential scattering and its effect on graphene mobility

D. K. Ferry

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

Over the past few years, the amazing properties of graphene have led to predictions for its use in a variety of areas, not the least of which is in semiconductor devices. However, it appears that graphene is dominated by short-range potential scattering which can arise from intrinsic defects which limit the mobility to relatively low values, well below those predicted based upon its intrinsic band structure. Here, we examine the mobility in graphene on BN, SiC, and SiO₂ when it is dominated by these defects.

Original language	English (US)
Pages (from-to)	76-84
Number of pages	9
Journal	Journal of Computational Electronics
Volume	12
Issue number	2
DOIs	https://doi.org/10.1007/s10825-012-0431-x
State	Published - Jun 2013

Keywords

Dislocations
Graphene
Mobility
Point defects

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Modeling and Simulation
Electrical and Electronic Engineering

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10.1007/s10825-012-0431-x

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KW - Point defects

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Short-range potential scattering and its effect on graphene mobility

Abstract

Keywords

ASJC Scopus subject areas

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