Sheet resistance modeling of the Ti/SiO2 system upon high temperature annealing

Yuxiao Zeng, Linghui Chen, Terry Alford

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

The reaction of Ti/SiO2 structure at elevated temperatures has been studied by measuring the sheet resistance as a function of annealing temperature for different initial Ti thicknesses. A sheet resistance model has been developed to account for the effects of the thickness and resistivity variations of the reaction products [Ti(O) and Ti5Si3]. The simulated sheet resistance values varying with the Ti5Si3 thickness are in good agreement with the general trend as obtained from the experimental measurements for different initial Ti thicknesses. The approach used in modeling can be applied to other thin film structures with similar reaction mechanism to simulate the overall sheet resistance variation.

Original languageEnglish (US)
Pages (from-to)64-66
Number of pages3
JournalApplied Physics Letters
Volume76
Issue number1
StatePublished - Jan 3 2000

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annealing
reaction products
trends
electrical resistivity
temperature
thin films

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Sheet resistance modeling of the Ti/SiO2 system upon high temperature annealing. / Zeng, Yuxiao; Chen, Linghui; Alford, Terry.

In: Applied Physics Letters, Vol. 76, No. 1, 03.01.2000, p. 64-66.

Research output: Contribution to journalArticle

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