The reaction of Ti/SiO2 structure at elevated temperatures has been studied by measuring the sheet resistance as a function of annealing temperature for different initial Ti thicknesses. A sheet resistance model has been developed to account for the effects of the thickness and resistivity variations of the reaction products [Ti(O) and Ti5Si3]. The simulated sheet resistance values varying with the Ti5Si3 thickness are in good agreement with the general trend as obtained from the experimental measurements for different initial Ti thicknesses. The approach used in modeling can be applied to other thin film structures with similar reaction mechanism to simulate the overall sheet resistance variation.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)