Shape evolution of layer-structured bismuth oxychloride nanostructures via low-temperature chemical vapor transport

Hailin Peng, Candace Chan, Stefan Meister, Xiao Feng Zhang, Yi Cui

Research output: Contribution to journalArticle

117 Citations (Scopus)

Abstract

Bismuth oxychloride (BiOCl) is a wide bandgap semiconductor used in cosmetics, pharmaceuticals, battery cathode, photocatalysis, and photoelectrochemical devices. We report here a facile low-temperature vapor-phase synthesis route for the direct grown of single crystalline BiOCl nanostructures on various substrates. We achieved control of a variety of morphologies including nanobelts, nanowires, nanoflowers, nanoflakes, and platelets.

Original languageEnglish (US)
Pages (from-to)247-252
Number of pages6
JournalChemistry of Materials
Volume21
Issue number2
DOIs
StatePublished - Jan 27 2009
Externally publishedYes

Fingerprint

Bismuth
Nanostructures
Vapors
Nanoflowers
Nanobelts
Cosmetics
Photocatalysis
Platelets
Drug products
Nanowires
Energy gap
Cathodes
Semiconductor materials
Crystalline materials
Temperature
Substrates
Pharmaceutical Preparations
bismuth oxychloride

ASJC Scopus subject areas

  • Materials Chemistry
  • Chemical Engineering(all)
  • Chemistry(all)

Cite this

Shape evolution of layer-structured bismuth oxychloride nanostructures via low-temperature chemical vapor transport. / Peng, Hailin; Chan, Candace; Meister, Stefan; Zhang, Xiao Feng; Cui, Yi.

In: Chemistry of Materials, Vol. 21, No. 2, 27.01.2009, p. 247-252.

Research output: Contribution to journalArticle

Peng, Hailin ; Chan, Candace ; Meister, Stefan ; Zhang, Xiao Feng ; Cui, Yi. / Shape evolution of layer-structured bismuth oxychloride nanostructures via low-temperature chemical vapor transport. In: Chemistry of Materials. 2009 ; Vol. 21, No. 2. pp. 247-252.
@article{34cf850b6239480bac220ebe8af7db74,
title = "Shape evolution of layer-structured bismuth oxychloride nanostructures via low-temperature chemical vapor transport",
abstract = "Bismuth oxychloride (BiOCl) is a wide bandgap semiconductor used in cosmetics, pharmaceuticals, battery cathode, photocatalysis, and photoelectrochemical devices. We report here a facile low-temperature vapor-phase synthesis route for the direct grown of single crystalline BiOCl nanostructures on various substrates. We achieved control of a variety of morphologies including nanobelts, nanowires, nanoflowers, nanoflakes, and platelets.",
author = "Hailin Peng and Candace Chan and Stefan Meister and Zhang, {Xiao Feng} and Yi Cui",
year = "2009",
month = "1",
day = "27",
doi = "10.1021/cm802041g",
language = "English (US)",
volume = "21",
pages = "247--252",
journal = "Chemistry of Materials",
issn = "0897-4756",
publisher = "American Chemical Society",
number = "2",

}

TY - JOUR

T1 - Shape evolution of layer-structured bismuth oxychloride nanostructures via low-temperature chemical vapor transport

AU - Peng, Hailin

AU - Chan, Candace

AU - Meister, Stefan

AU - Zhang, Xiao Feng

AU - Cui, Yi

PY - 2009/1/27

Y1 - 2009/1/27

N2 - Bismuth oxychloride (BiOCl) is a wide bandgap semiconductor used in cosmetics, pharmaceuticals, battery cathode, photocatalysis, and photoelectrochemical devices. We report here a facile low-temperature vapor-phase synthesis route for the direct grown of single crystalline BiOCl nanostructures on various substrates. We achieved control of a variety of morphologies including nanobelts, nanowires, nanoflowers, nanoflakes, and platelets.

AB - Bismuth oxychloride (BiOCl) is a wide bandgap semiconductor used in cosmetics, pharmaceuticals, battery cathode, photocatalysis, and photoelectrochemical devices. We report here a facile low-temperature vapor-phase synthesis route for the direct grown of single crystalline BiOCl nanostructures on various substrates. We achieved control of a variety of morphologies including nanobelts, nanowires, nanoflowers, nanoflakes, and platelets.

UR - http://www.scopus.com/inward/record.url?scp=61849084602&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=61849084602&partnerID=8YFLogxK

U2 - 10.1021/cm802041g

DO - 10.1021/cm802041g

M3 - Article

VL - 21

SP - 247

EP - 252

JO - Chemistry of Materials

JF - Chemistry of Materials

SN - 0897-4756

IS - 2

ER -