Abstract

Spin-on-dopants and rapid thermal processing have been used to form ultra-shallow n+-p junctions with metallurgical junction depths as shallow as 12 nm as determined by secondary ion mass spectroscopy. The electrical junction depth and the total charge concentration have been measured in the vicinity of the junction using electron holography and are shown to be consistent with activation efficiencies of 80%. The ultra-shallow junctions have been used as the source and drain contacts of sub-100-nm gate length MOSFETs. From electrical measurements, the authors extract a lateral diffusion length for the source and drains that is comparable to the vertical extent of the n+-p junctions.

Original languageEnglish (US)
Pages (from-to)1277-1283
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume50
Issue number5
DOIs
StatePublished - May 2003

Fingerprint

Electron holography
Rapid thermal processing
field effect transistors
Chemical activation
Doping (additives)
Spectroscopy
Ions
p-n junctions
diffusion length
holography
electrical measurement
mass spectroscopy
activation
ions
electrons

Keywords

  • Electron holography
  • MOSFET
  • Ultra-shallow source/drain

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

Shallow source/drain extensions for deep submicron MOSFETs using spin-on-dopants. / Gopalan, Chakravarthy; Chakraborty, Partha S.; Yang, Jinman; Kim, Taehoon; Wu, Zhiyuan; McCartney, Martha; Goodnick, Stephen; Kozicki, Michael; Thornton, Trevor.

In: IEEE Transactions on Electron Devices, Vol. 50, No. 5, 05.2003, p. 1277-1283.

Research output: Contribution to journalArticle

Gopalan, Chakravarthy ; Chakraborty, Partha S. ; Yang, Jinman ; Kim, Taehoon ; Wu, Zhiyuan ; McCartney, Martha ; Goodnick, Stephen ; Kozicki, Michael ; Thornton, Trevor. / Shallow source/drain extensions for deep submicron MOSFETs using spin-on-dopants. In: IEEE Transactions on Electron Devices. 2003 ; Vol. 50, No. 5. pp. 1277-1283.
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