Sequential tunneling transport characteristics of GaN/AlGaN coupled-quantum-well structures

Faisal Sudradjat, Wei Zhang, Kristina Driscoll, Yitao Liao, Anirban Bhattacharyya, Christos Thomidis, Lin Zhou, David Smith, Theodore D. Moustakas, Roberto Paiella

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Abstract

Vertical electronic transport in periodic GaN/AlGaN multiple-quantum-well structures grown on free-standing GaN substrates is investigated. Highly nonlinear current-voltage characteristics are measured, displaying a clear transition from a high-resistance state near zero applied bias to a low-resistance state as the voltage is increased. The measurement results, including their temperature dependence and the variations in turn-on voltage with subband structure and bias polarity are in full agreement with a picture of sequential tunneling through the ground-state subbands of adjacent coupled quantum wells. Scattering-assisted tunneling due to interface roughness or structural defects appears to be the dominant transport mechanism. The potential role of photon-assisted tunneling is also investigated.

Original languageEnglish (US)
Article number103704
JournalJournal of Applied Physics
Volume108
Issue number10
DOIs
Publication statusPublished - Nov 15 2010

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Sudradjat, F., Zhang, W., Driscoll, K., Liao, Y., Bhattacharyya, A., Thomidis, C., ... Paiella, R. (2010). Sequential tunneling transport characteristics of GaN/AlGaN coupled-quantum-well structures. Journal of Applied Physics, 108(10), [103704]. https://doi.org/10.1063/1.3511334