Sequential tunneling transport characteristics of GaN/AlGaN coupled-quantum-well structures

Faisal Sudradjat; Wei Zhang; Kristina Driscoll; Yitao Liao; Anirban Bhattacharyya; Christos Thomidis; Lin Zhou; David Smith; Theodore D. Moustakas; Roberto Paiella

doi:10.1063/1.3511334

Sequential tunneling transport characteristics of GaN/AlGaN coupled-quantum-well structures

Faisal Sudradjat, Wei Zhang, Kristina Driscoll, Yitao Liao, Anirban Bhattacharyya, Christos Thomidis, Lin Zhou, David Smith, Theodore D. Moustakas, Roberto Paiella

Research output: Contribution to journal › Article › peer-review

26 Scopus citations

Abstract

Vertical electronic transport in periodic GaN/AlGaN multiple-quantum-well structures grown on free-standing GaN substrates is investigated. Highly nonlinear current-voltage characteristics are measured, displaying a clear transition from a high-resistance state near zero applied bias to a low-resistance state as the voltage is increased. The measurement results, including their temperature dependence and the variations in turn-on voltage with subband structure and bias polarity are in full agreement with a picture of sequential tunneling through the ground-state subbands of adjacent coupled quantum wells. Scattering-assisted tunneling due to interface roughness or structural defects appears to be the dominant transport mechanism. The potential role of photon-assisted tunneling is also investigated.

Original language	English (US)
Article number	103704
Journal	Journal of Applied Physics
Volume	108
Issue number	10
DOIs	https://doi.org/10.1063/1.3511334
State	Published - Nov 15 2010

ASJC Scopus subject areas

General Physics and Astronomy

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10.1063/1.3511334

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title = "Sequential tunneling transport characteristics of GaN/AlGaN coupled-quantum-well structures",

abstract = "Vertical electronic transport in periodic GaN/AlGaN multiple-quantum-well structures grown on free-standing GaN substrates is investigated. Highly nonlinear current-voltage characteristics are measured, displaying a clear transition from a high-resistance state near zero applied bias to a low-resistance state as the voltage is increased. The measurement results, including their temperature dependence and the variations in turn-on voltage with subband structure and bias polarity are in full agreement with a picture of sequential tunneling through the ground-state subbands of adjacent coupled quantum wells. Scattering-assisted tunneling due to interface roughness or structural defects appears to be the dominant transport mechanism. The potential role of photon-assisted tunneling is also investigated.",

author = "Faisal Sudradjat and Wei Zhang and Kristina Driscoll and Yitao Liao and Anirban Bhattacharyya and Christos Thomidis and Lin Zhou and David Smith and Moustakas, {Theodore D.} and Roberto Paiella",

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doi = "10.1063/1.3511334",

language = "English (US)",

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T1 - Sequential tunneling transport characteristics of GaN/AlGaN coupled-quantum-well structures

AU - Sudradjat, Faisal

AU - Zhang, Wei

AU - Driscoll, Kristina

AU - Liao, Yitao

AU - Bhattacharyya, Anirban

AU - Thomidis, Christos

AU - Zhou, Lin

AU - Smith, David

AU - Moustakas, Theodore D.

AU - Paiella, Roberto

PY - 2010/11/15

Y1 - 2010/11/15

N2 - Vertical electronic transport in periodic GaN/AlGaN multiple-quantum-well structures grown on free-standing GaN substrates is investigated. Highly nonlinear current-voltage characteristics are measured, displaying a clear transition from a high-resistance state near zero applied bias to a low-resistance state as the voltage is increased. The measurement results, including their temperature dependence and the variations in turn-on voltage with subband structure and bias polarity are in full agreement with a picture of sequential tunneling through the ground-state subbands of adjacent coupled quantum wells. Scattering-assisted tunneling due to interface roughness or structural defects appears to be the dominant transport mechanism. The potential role of photon-assisted tunneling is also investigated.

AB - Vertical electronic transport in periodic GaN/AlGaN multiple-quantum-well structures grown on free-standing GaN substrates is investigated. Highly nonlinear current-voltage characteristics are measured, displaying a clear transition from a high-resistance state near zero applied bias to a low-resistance state as the voltage is increased. The measurement results, including their temperature dependence and the variations in turn-on voltage with subband structure and bias polarity are in full agreement with a picture of sequential tunneling through the ground-state subbands of adjacent coupled quantum wells. Scattering-assisted tunneling due to interface roughness or structural defects appears to be the dominant transport mechanism. The potential role of photon-assisted tunneling is also investigated.

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Sequential tunneling transport characteristics of GaN/AlGaN coupled-quantum-well structures

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