Abstract
Proton irradiation produces both ionization and displacement damage in semiconductor devices. In this paper, a technique for separating the effects of these two types of damage using a lateral PNP bipolar transistor with a gate contact over the active base region is described. By biasing the gate appropriately, the effects of ionization-induced damage are minimized and the effects of displacement damage can be measured independently. Experiments and simulations are used to validate this approach and provide insight into proton-induced BJT degradation.
Original language | English (US) |
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Pages (from-to) | 3185-3190 |
Number of pages | 6 |
Journal | IEEE Transactions on Nuclear Science |
Volume | 49 I |
Issue number | 6 |
DOIs | |
State | Published - Dec 2002 |
Externally published | Yes |
Keywords
- Bipolar
- Displacement
- Ionization
- Proton
- Radiation
ASJC Scopus subject areas
- Nuclear and High Energy Physics
- Nuclear Energy and Engineering
- Electrical and Electronic Engineering