Separation of ionization and displacement damage using gate-controlled lateral PNP bipolar transistors

Dennis R. Ball, Ron D. Schrimpf, Hugh J. Barnaby

Research output: Contribution to journalArticle

43 Scopus citations

Abstract

Proton irradiation produces both ionization and displacement damage in semiconductor devices. In this paper, a technique for separating the effects of these two types of damage using a lateral PNP bipolar transistor with a gate contact over the active base region is described. By biasing the gate appropriately, the effects of ionization-induced damage are minimized and the effects of displacement damage can be measured independently. Experiments and simulations are used to validate this approach and provide insight into proton-induced BJT degradation.

Original languageEnglish (US)
Pages (from-to)3185-3190
Number of pages6
JournalIEEE Transactions on Nuclear Science
Volume49 I
Issue number6
DOIs
StatePublished - Dec 1 2002
Externally publishedYes

Keywords

  • Bipolar
  • Displacement
  • Ionization
  • Proton
  • Radiation

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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