TY - GEN
T1 - Sensitivity of ellipsometric modeling to the "islands" of silicon precipitates at the bottom of the buried oxdde layer in annealed SIMOX
AU - Chandler-Horowitz, D.
AU - Marchiando, J. F.
AU - Doss, M.
AU - Krause, S.
AU - Visitserngtrakul, S.
PY - 1990/1/1
Y1 - 1990/1/1
N2 - Spectroscopic ellipsometry is a nondestructive probe which can be highly sensitive to the multilayer structure of materials such as SIMOX. Recent TEM micrographs of high flux single implant SIMOX annealed at 1300°C for 6 hours, show "islands" of silicon precipitates near the bottom of the buried oxide layer. Spectroscopic ellipsometric measurements were performed on these samples at various implant doses and beam current densities to observe how the measured data fit the data theoretically predicted for various models of SIMOX that lead to the presence of these "islands".
AB - Spectroscopic ellipsometry is a nondestructive probe which can be highly sensitive to the multilayer structure of materials such as SIMOX. Recent TEM micrographs of high flux single implant SIMOX annealed at 1300°C for 6 hours, show "islands" of silicon precipitates near the bottom of the buried oxide layer. Spectroscopic ellipsometric measurements were performed on these samples at various implant doses and beam current densities to observe how the measured data fit the data theoretically predicted for various models of SIMOX that lead to the presence of these "islands".
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U2 - 10.1109/SOSSOI.1990.145715
DO - 10.1109/SOSSOI.1990.145715
M3 - Conference contribution
AN - SCOPUS:85068311276
T3 - 1990 IEEE SOS/SOI Technology Conference, Proceedings
SP - 73
EP - 74
BT - 1990 IEEE SOS/SOI Technology Conference, Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 1990 IEEE SOS/SOI Technology Conference
Y2 - 2 October 1990 through 4 October 1990
ER -