Sensitivity of ellipsometric modeling to the "islands" of silicon precipitates at the bottom of the buried oxdde layer in annealed SIMOX

D. Chandler-Horowitz, J. F. Marchiando, M. Doss, Stephen Krause, S. Visitserngtrakul

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Spectroscopic ellipsometry is a nondestructive probe which can be highly sensitive to the multilayer structure of materials such as SIMOX. Recent TEM micrographs of high flux single implant SIMOX annealed at 1300°C for 6 hours, show "islands" of silicon precipitates near the bottom of the buried oxide layer. Spectroscopic ellipsometric measurements were performed on these samples at various implant doses and beam current densities to observe how the measured data fit the data theoretically predicted for various models of SIMOX that lead to the presence of these "islands".

Original languageEnglish (US)
Title of host publication1990 IEEE SOS/SOI Technology Conference, Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages73-74
Number of pages2
ISBN (Electronic)0879425733, 9780879425739
DOIs
StatePublished - Jan 1 1990
Event1990 IEEE SOS/SOI Technology Conference - Key West, United States
Duration: Oct 2 1990Oct 4 1990

Publication series

Name1990 IEEE SOS/SOI Technology Conference, Proceedings

Conference

Conference1990 IEEE SOS/SOI Technology Conference
CountryUnited States
CityKey West
Period10/2/9010/4/90

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ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Chandler-Horowitz, D., Marchiando, J. F., Doss, M., Krause, S., & Visitserngtrakul, S. (1990). Sensitivity of ellipsometric modeling to the "islands" of silicon precipitates at the bottom of the buried oxdde layer in annealed SIMOX. In 1990 IEEE SOS/SOI Technology Conference, Proceedings (pp. 73-74). [145715] (1990 IEEE SOS/SOI Technology Conference, Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SOSSOI.1990.145715