TY - JOUR
T1 - Semipolar single-crystal ZnO films deposited by low-temperature aqueous solution phase epitaxy on GaN light-emitting diodes
AU - Richardson, Jacob J.
AU - Koslow, Ingrid
AU - Pan, Chih Chien
AU - Zhao, Yuji
AU - Ha, Jun Seok
AU - Den Baars, Steven P.
PY - 2011/12
Y1 - 2011/12
N2 - Low-temperature aqueous solution deposition has been used for the first time to produce epitaxial ZnO layers on the semipolar (101̄1̄) surface of bulk GaN substrates and LEDs. Although the ZnO films have single in-plane and out-of-plane orientations, which are nominally the same as those of the (101̄1̄) GaN substrate, the ZnO lattice is observed to be slightly tilted with respect to that of the substrate. A (101̄1̄) light-emitting diode using an epitaxial ZnO film as a transparent current-spreading layer achieved a high external quantum efficiency of 48%.
AB - Low-temperature aqueous solution deposition has been used for the first time to produce epitaxial ZnO layers on the semipolar (101̄1̄) surface of bulk GaN substrates and LEDs. Although the ZnO films have single in-plane and out-of-plane orientations, which are nominally the same as those of the (101̄1̄) GaN substrate, the ZnO lattice is observed to be slightly tilted with respect to that of the substrate. A (101̄1̄) light-emitting diode using an epitaxial ZnO film as a transparent current-spreading layer achieved a high external quantum efficiency of 48%.
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U2 - 10.1143/APEX.4.126502
DO - 10.1143/APEX.4.126502
M3 - Article
AN - SCOPUS:83455200044
SN - 1882-0778
VL - 4
JO - Applied Physics Express
JF - Applied Physics Express
IS - 12
M1 - 126502
ER -