Semipolar single-crystal ZnO films deposited by low-temperature aqueous solution phase epitaxy on GaN light-emitting diodes

Jacob J. Richardson, Ingrid Koslow, Chih Chien Pan, Yuji Zhao, Jun Seok Ha, Steven P. Den Baars

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Low-temperature aqueous solution deposition has been used for the first time to produce epitaxial ZnO layers on the semipolar (101̄1̄) surface of bulk GaN substrates and LEDs. Although the ZnO films have single in-plane and out-of-plane orientations, which are nominally the same as those of the (101̄1̄) GaN substrate, the ZnO lattice is observed to be slightly tilted with respect to that of the substrate. A (101̄1̄) light-emitting diode using an epitaxial ZnO film as a transparent current-spreading layer achieved a high external quantum efficiency of 48%.

Original languageEnglish (US)
Article number126502
JournalApplied Physics Express
Volume4
Issue number12
DOIs
StatePublished - Dec 2011
Externally publishedYes

Fingerprint

Epitaxial growth
epitaxy
Light emitting diodes
light emitting diodes
Single crystals
aqueous solutions
single crystals
Substrates
Epitaxial films
Epitaxial layers
Quantum efficiency
Temperature
quantum efficiency

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Semipolar single-crystal ZnO films deposited by low-temperature aqueous solution phase epitaxy on GaN light-emitting diodes. / Richardson, Jacob J.; Koslow, Ingrid; Pan, Chih Chien; Zhao, Yuji; Ha, Jun Seok; Den Baars, Steven P.

In: Applied Physics Express, Vol. 4, No. 12, 126502, 12.2011.

Research output: Contribution to journalArticle

Richardson, Jacob J. ; Koslow, Ingrid ; Pan, Chih Chien ; Zhao, Yuji ; Ha, Jun Seok ; Den Baars, Steven P. / Semipolar single-crystal ZnO films deposited by low-temperature aqueous solution phase epitaxy on GaN light-emitting diodes. In: Applied Physics Express. 2011 ; Vol. 4, No. 12.
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