Semipolar single-crystal ZnO films deposited by low-temperature aqueous solution phase epitaxy on GaN light-emitting diodes

Jacob J. Richardson, Ingrid Koslow, Chih Chien Pan, Yuji Zhao, Jun Seok Ha, Steven P. Den Baars

Research output: Contribution to journalArticle

11 Scopus citations

Abstract

Low-temperature aqueous solution deposition has been used for the first time to produce epitaxial ZnO layers on the semipolar (101̄1̄) surface of bulk GaN substrates and LEDs. Although the ZnO films have single in-plane and out-of-plane orientations, which are nominally the same as those of the (101̄1̄) GaN substrate, the ZnO lattice is observed to be slightly tilted with respect to that of the substrate. A (101̄1̄) light-emitting diode using an epitaxial ZnO film as a transparent current-spreading layer achieved a high external quantum efficiency of 48%.

Original languageEnglish (US)
Article number126502
JournalApplied Physics Express
Volume4
Issue number12
DOIs
StatePublished - Dec 1 2011
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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