Low-temperature aqueous solution deposition has been used for the first time to produce epitaxial ZnO layers on the semipolar (101̄1̄) surface of bulk GaN substrates and LEDs. Although the ZnO films have single in-plane and out-of-plane orientations, which are nominally the same as those of the (101̄1̄) GaN substrate, the ZnO lattice is observed to be slightly tilted with respect to that of the substrate. A (101̄1̄) light-emitting diode using an epitaxial ZnO film as a transparent current-spreading layer achieved a high external quantum efficiency of 48%.
ASJC Scopus subject areas
- Physics and Astronomy(all)