Semipolar (2021̄) laser diodes (λ=505nm) with wavelength-stable InGaN/GaN quantum wells

Chia Yen Huang, Yuji Zhao, Matthew T. Hardy, Kenji Fujito, Daniel F. Feezell, James S. Speck, Steven P. DenBaars, Shuji Nakamura

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

GaN-based semipolar (2021̄) laser diodes (λ=505 nm) with a 4 nm wavelength blueshift from spontaneous emission to lasing are demonstrated. The minimal blueshift is attributed to the stable energy profile in the quantum wells.

Original languageEnglish (US)
Title of host publication2012 Conference on Lasers and Electro-Optics, CLEO 2012
Publication statusPublished - 2012
Externally publishedYes
Event2012 Conference on Lasers and Electro-Optics, CLEO 2012 - San Jose, CA, United States
Duration: May 6 2012May 11 2012

Other

Other2012 Conference on Lasers and Electro-Optics, CLEO 2012
CountryUnited States
CitySan Jose, CA
Period5/6/125/11/12

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Huang, C. Y., Zhao, Y., Hardy, M. T., Fujito, K., Feezell, D. F., Speck, J. S., ... Nakamura, S. (2012). Semipolar (2021̄) laser diodes (λ=505nm) with wavelength-stable InGaN/GaN quantum wells. In 2012 Conference on Lasers and Electro-Optics, CLEO 2012 [6326091]