Semipolar (20-21) single-quantum-well red light-emitting diodes with a low forward voltage

Yoshinobu Kawaguchi, Chia Yen Huang, Yuh Renn Wu, Yuji Zhao, Steven P. DenBaars, Shuji Nakamura

Research output: Contribution to journalArticle

18 Scopus citations

Abstract

We have demonstrated the InGaN/GaN single-quantum-well (SQW) red light-emitting diodes (LEDs) grown on the free-standing GaN (20-21) substrate with a forward voltage as low as 2.8 V at 20 mA. A low p-GaN growth temperature is required to prevent the structure deterioration during the p-GaN growth. The reduction of the forward voltage was observed as the emission wavelength increased in the (20-21) SQW LEDs, which is attributed to its reversed polarization-related electric field compared to the conventional c-plane LEDs.

Original languageEnglish (US)
Article number08JC08
JournalJapanese Journal of Applied Physics
Volume52
Issue number8 PART 2
DOIs
StatePublished - Aug 1 2013
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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