Semiconductor waveguide inversion in disordered narrow band-gap materials

M. J. Gilbert, R. Akis, D. K. Ferry

Research output: Contribution to journalArticle

Abstract

A study was performed on semiconductor waveguide inversion in disordered narrow band-gap materials. The operation of the coupled waveguide inverter was found to be stable under the presence of moderate disorder in the system for both the InAs and the GaAs systems. It was found that with the inclusion of mild to moderate disorder in the materials, waveguide NOT gate function was still possible.

Original languageEnglish (US)
Pages (from-to)1924-1927
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume21
Issue number4
StatePublished - Jul 1 2003

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ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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