A study was performed on semiconductor waveguide inversion in disordered narrow band-gap materials. The operation of the coupled waveguide inverter was found to be stable under the presence of moderate disorder in the system for both the InAs and the GaAs systems. It was found that with the inclusion of mild to moderate disorder in the materials, waveguide NOT gate function was still possible.
|Original language||English (US)|
|Number of pages||4|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|State||Published - Jul 1 2003|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering