Semiconductor waveguide inversion in disordered narrow band-gap materials

M. J. Gilbert, R. Akis, D. K. Ferry

Research output: Contribution to journalArticle

Abstract

A study was performed on semiconductor waveguide inversion in disordered narrow band-gap materials. The operation of the coupled waveguide inverter was found to be stable under the presence of moderate disorder in the system for both the InAs and the GaAs systems. It was found that with the inclusion of mild to moderate disorder in the materials, waveguide NOT gate function was still possible.

Original languageEnglish (US)
Pages (from-to)1924-1927
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume21
Issue number4
StatePublished - Jul 2003

Fingerprint

narrowband
Energy gap
Waveguides
inversions
Semiconductor materials
waveguides
disorders
inclusions

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Surfaces and Interfaces
  • Physics and Astronomy (miscellaneous)

Cite this

Semiconductor waveguide inversion in disordered narrow band-gap materials. / Gilbert, M. J.; Akis, R.; Ferry, D. K.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 21, No. 4, 07.2003, p. 1924-1927.

Research output: Contribution to journalArticle

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