Semiconductor substrate cleaning and surface morphology in molecular beam epitaxy

S. Ritchie, S. R. Johnson, C. Lavoie, J. A. Mackenzie, T. Tiedje, R. Streater

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

In-situ laser light scattering shows that the surface morphology of GaAs substrates during the initial stages of homoepitaxial growth is a sensitive indicator of substrate cleanliness. Oxide removal by atomic-hydrogen etching has no effect on the morphology of polished (100) GaAs substrates, while thermal oxide desorption roughens the surface. Carbon contamination of the surface causes roughening during subsequent firm growth. Secondary ion mass spectrometry and photoemission spectroscopy show that atomic-hydrogen etching reduces the carbon contamination on the substrate but does not remove silicon oxide. Synchrotron radiation photoemission measurements show that some as-received substrates are contaminated with a thin uniform layer of SiO2.

Original languageEnglish (US)
Pages (from-to)418-426
Number of pages9
JournalSurface Science
Volume374
Issue number1-3
DOIs
StatePublished - Mar 10 1997
Externally publishedYes

Keywords

  • Etching
  • Gallium arsenide
  • Laser methods
  • Light scattering
  • Soft X-ray Photoelectron spectroscopy
  • Surface structure, morphology, roughness, and topography

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Semiconductor substrate cleaning and surface morphology in molecular beam epitaxy'. Together they form a unique fingerprint.

Cite this